In this letter, we report new findings in the relation between channel hot-carrier (CHC) degradation and gate-oxide breakdown (BD) in short-channel nMOSFETS biased at V-G > V-D. We observe that the time-to-BD is strongly reduced in the hot carrier regime and that although the channel hot-electron injection into the oxide occurs mainly at the drain side, stress-induced leakage current (SILC) generation and oxide BD always occur at the source side. The results of these measurements indicate that not solely the energy of the injected electrons but also the oxide electric field is determinant in the oxide BD process.

New insights into the relation between channel hot carrier degradation and oxide breakdown in short channel nMOSFETs

CRUPI, Felice;
2003

Abstract

In this letter, we report new findings in the relation between channel hot-carrier (CHC) degradation and gate-oxide breakdown (BD) in short-channel nMOSFETS biased at V-G > V-D. We observe that the time-to-BD is strongly reduced in the hot carrier regime and that although the channel hot-electron injection into the oxide occurs mainly at the drain side, stress-induced leakage current (SILC) generation and oxide BD always occur at the source side. The results of these measurements indicate that not solely the energy of the injected electrons but also the oxide electric field is determinant in the oxide BD process.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11770/140689
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