This work investigates the additional gate current component with respect to the direct tunneling of electrons between the conduction bands measured in ultrathin oxide metal-oxide-semiconductor field-effect transistors at low voltages, before and after the application of a high field stress. We discuss several possible conduction mechanisms on the basis of the band diagram profiles obtained by means of a one-dimensional self-consistent Poisson-Schrodinger solver and we explain why this additional leakage current is mainly due to electron tunneling involving the native and stress-induced interface states in the silicon band gap either at the cathode or at the anode. (C) 2002 American Institute of Physics.
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|Titolo:||On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures|
|Data di pubblicazione:||2002|
|Citazione:||On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures / Crupi, Felice; Ciofi, C; Germano, A; Iannaccone, G; Stathis, Jh; Lombardo, S.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 80:24(2002), pp. 4597-4599.|
|Appare nelle tipologie:||1.1 Articolo in rivista|