The on-off fluctuations of the tunnel current in 5.6 nm SiO2 films before dielectric breakdown are analyzed in detail. For this purpose, a low noise measurement system has been realized which allows detecting the pre-breakdown phenomena and interrupting the stress before the catastrophic failure occurs. A spectral analysis of these fluctuations is presented along with the preliminary results of the experiments made possible, for the first time, by the new measurement system.
Pre-breakdown in thin SiO2 films
CRUPI, Felice;
2000-01-01
Abstract
The on-off fluctuations of the tunnel current in 5.6 nm SiO2 films before dielectric breakdown are analyzed in detail. For this purpose, a low noise measurement system has been realized which allows detecting the pre-breakdown phenomena and interrupting the stress before the catastrophic failure occurs. A spectral analysis of these fluctuations is presented along with the preliminary results of the experiments made possible, for the first time, by the new measurement system.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
