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EnglishThis paper examines the impact of hot carriers (HCs) on n-channel metal-oxide-semiconductor (MOS) field-effect transistor mismatch across the 45- and 65-nm complementary MOS technology generations. The reported statistical analysis is based on a large overall sample population of about 1000 transistors. HC stress introduces a source of variability in device electrical parameters due to the randomly generated charge traps in the gate dielectric or at the substrate/dielectric interface. The evolution of the threshold-voltage mismatch during an HC stress is well modeled by assuming a Poisson distribution of the induced charge traps with a nonuniform generation along the channel. Once the evolution of the HC-induced V(T) shift is known, a single parameter is able to accurately describe the evolution of the HC-induced VT variability. This parameter is independent of the stress time and stress bias voltage. The HC stress causes a significantly larger degradation in the subthreshold slope variability, compared to threshold voltage variability for both investigated technology nodes.
Impact of Hot Carriers on nMOSFET Variability in 45-and 65-nm CMOS Technologies / Magnone, P; Crupi, Felice; Wils, N; Jain, R; Tuinhout, H; Andricciola, P; Giusi, G; Fiegna, C.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 58:8(2011), pp. 2347-2353.
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| Titolo: | Impact of Hot Carriers on nMOSFET Variability in 45-and 65-nm CMOS Technologies |
| Autori: | |
| Data di pubblicazione: | 2011 |
| Rivista: | |
| Citazione: | Impact of Hot Carriers on nMOSFET Variability in 45-and 65-nm CMOS Technologies / Magnone, P; Crupi, Felice; Wils, N; Jain, R; Tuinhout, H; Andricciola, P; Giusi, G; Fiegna, C.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 58:8(2011), pp. 2347-2353. |
| Handle: | http://hdl.handle.net/20.500.11770/142605 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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