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EnglishThe impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-k gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of IN noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-k layer closer to the Si-SiO2 interface enhances the 1/f noise mainly due to mobility fluctuations.
The impact of the interfacial layer thickness on the low-frequency (LF) noise (1/f noise) behavior of n- and p-channel MOSFETs with high-kappa, gate dielectrics and metal gates is investigated. Decreasing the interfacial layer thickness from 0.8 to 0.4 nm affects the 1/f noise in two ways. 1) The mobility fluctuations mechanism becomes the main source of IN noise not only on pMOS devices, as usually observed, but also on nMOS devices. 2) A significant increase of the Hooge's parameter is observed for both types of MOSFETs. These experimental findings indicate that bringing the high-kappa, layer closer to the Si-SiO2 interface enhances the 1/f noise mainly due to mobility fluctuations.
Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks / Crupi, Felice; Srinivasan, P; Magnone, P; Simoen, E; Pace, Calogero; Misra, D; Claeys, C.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 27:8(2006), pp. 688-691. ((Intervento presentato al convegno Workshop on Dielectrics in Microelectronics.
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| Titolo: | Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks |
| Autori: | |
| Data di pubblicazione: | 2006 |
| Rivista: | |
| Citazione: | Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks / Crupi, Felice; Srinivasan, P; Magnone, P; Simoen, E; Pace, Calogero; Misra, D; Claeys, C.. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 27:8(2006), pp. 688-691. ((Intervento presentato al convegno Workshop on Dielectrics in Microelectronics. |
| Handle: | http://hdl.handle.net/20.500.11770/151442 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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