Multiple gate tridimensional memory cells can have several additional advantages besides increased read current and excellent Ion/Ioff ratio, which are inherent in the multiple-gate transistor architecture. We show that tridimensional memory cells with rounded top geometry and SONOS storage stack strongly improve the Fowler-Nordheim tunneling program-erase performances because of an enhanced electric field effect and an increase of the cell coupling factor. Moreover, a remarkable enhancement of the tridimensional cell performances is expected if the blocking silicon oxide and the poly-silicon gate in the SONOS memory stack are replaced with a high-k dielectric and a high work-function metallic control gate.

Multiple gate tridimensional memory cells can have several additional advantages besides increased read current and excellent Ion/Ioff ratio, which are inherent in the multiple-gate transistor architecture. We show that tridimensional memory cells with rounded top geometry and SONOS storage stack strongly improve the Fowler-Nordheim tunneling program-erase performances because of an enhanced electric field effect and an increase of the cell coupling factor. Moreover, a remarkable enhancement of the tridimensional cell performances is expected if the blocking silicon oxide and the poly-silicon gate in the SONOS memory stack are replaced with a high-k dielectric and a high work-function metallic control gate. (C) 2010 Elsevier Ltd. All rights reserved.

Multiple gate NVM cells with improved Fowler-Nordheim tunneling program and erase performances

PACE, Calogero;CRUPI, Felice
2010

Abstract

Multiple gate tridimensional memory cells can have several additional advantages besides increased read current and excellent Ion/Ioff ratio, which are inherent in the multiple-gate transistor architecture. We show that tridimensional memory cells with rounded top geometry and SONOS storage stack strongly improve the Fowler-Nordheim tunneling program-erase performances because of an enhanced electric field effect and an increase of the cell coupling factor. Moreover, a remarkable enhancement of the tridimensional cell performances is expected if the blocking silicon oxide and the poly-silicon gate in the SONOS memory stack are replaced with a high-k dielectric and a high work-function metallic control gate. (C) 2010 Elsevier Ltd. All rights reserved.
Multiple gate tridimensional memory cells can have several additional advantages besides increased read current and excellent Ion/Ioff ratio, which are inherent in the multiple-gate transistor architecture. We show that tridimensional memory cells with rounded top geometry and SONOS storage stack strongly improve the Fowler-Nordheim tunneling program-erase performances because of an enhanced electric field effect and an increase of the cell coupling factor. Moreover, a remarkable enhancement of the tridimensional cell performances is expected if the blocking silicon oxide and the poly-silicon gate in the SONOS memory stack are replaced with a high-k dielectric and a high work-function metallic control gate.
Non-volatile memories; SONOS memories; TANOS memories; 3D memory cell; FinFET; Multiple-gate transistor
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11770/152435
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