This paper presents a benchmark of a virtual III-V TFET nanowire technology platform against the predictive models of CMOS FinFETs for the 10-nm technology node. The standard 28T full adder and the 32-bits ripple carry adder are used as vehicle circuit/architecture for the comparison, respectively. Figures-of-merit including delays, energy and energy-delay plots are discussed.
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders
LANUZZA, Marco;CRUPI, Felice;
2016-01-01
Abstract
This paper presents a benchmark of a virtual III-V TFET nanowire technology platform against the predictive models of CMOS FinFETs for the 10-nm technology node. The standard 28T full adder and the 32-bits ripple carry adder are used as vehicle circuit/architecture for the comparison, respectively. Figures-of-merit including delays, energy and energy-delay plots are discussed.File in questo prodotto:
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