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EnglishBy means of angle-resolved photoemission spectroscopy measurements, the electronic band structure of the three-dimensional PbBi 4 Te 7 and PbBi 6 Te 10 topological insulators is compared. The measurements clearly reveal coexisting topological and multiple Rashba-like split states close to the Fermi level for both systems. The observed topological states derive from different surface terminations, as confirmed by scanning tunneling microscopy measurements, and are well-described by the density functional theory simulations. Both the topological and the Rashba-like states reveal a prevalent two-dimensional character barely affected by air exposure. X-ray and valence band photoemission measurements suggest Rashba-like states stem from the van der Waals gap expansion, consistently with density functional theory calculations.
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| Titolo: | Deep Insight Into the Electronic Structure of Ternary Topological Insulators: A Comparative Study of PbBi 4 Te 7 and PbBi 6 Te 10 |
| Autori: | |
| Data di pubblicazione: | 2018 |
| Rivista: | |
| Handle: | http://hdl.handle.net/20.500.11770/291037 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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http://hdl.handle.net/20.500.11770/291037
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