In this paper, we analyze, by means of numerical simulations, metal wrap through (MWT) silicon solar cells without a rear emitter and/or via an emitter that feature a Schottky contact between the Ag metal and the p-base. We show how the effective Schottky barrier height affects both dark and illuminated properties of the cell. An equivalent electrical model for the dark analysis is proposed, which accounts for the shunting effects and the thermionic-emission current at Ag/p-base contact. We investigate the figures of merit of MWT solar cells for different via configurations, highlighting the influence of the Ag/p-base barrier height. Moreover, the influence of the rear busbar width, as well as of the operating temperature, is analyzed. © 2014 IEEE.

Numerical simulation on the influence of via and rear emitters in MWT solar cells

De Rose R.;
2014

Abstract

In this paper, we analyze, by means of numerical simulations, metal wrap through (MWT) silicon solar cells without a rear emitter and/or via an emitter that feature a Schottky contact between the Ag metal and the p-base. We show how the effective Schottky barrier height affects both dark and illuminated properties of the cell. An equivalent electrical model for the dark analysis is proposed, which accounts for the shunting effects and the thermionic-emission current at Ag/p-base contact. We investigate the figures of merit of MWT solar cells for different via configurations, highlighting the influence of the Ag/p-base barrier height. Moreover, the influence of the rear busbar width, as well as of the operating temperature, is analyzed. © 2014 IEEE.
Back-contact; metal wrap through (MWT); photovoltaics; Schottky; simulation; solar cell; via
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11770/303489
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