In this work, we are studying the effect of the technology scaling for different full-wave rectifier topologies using the Cross-Coupled Differential Drive (CCDD) strategy to implement a multiplier. For a conventional CCDD scaling from 90nm to 32nm, the PCE and VCE are maintained the same while a large degradation of the dynamic range and sensitivity are observed. This effect could be slightly limited by using a self-body bias CCDD topology. However, the use of TFET enables to avoid this degradation and provide a large VCE and output voltage for input voltage lower than 300mV. To extend this VCE for input voltage>300mV, we use a CCDD topology increasing the loading drive capability. Interestingly, this resulted not only on increasing the output voltage for large Vin but also demonstrated larger PCE than expected for this topology.
RF-DC Multiplier for RF Energy Harvester based on 32nm and TFET technologies
Lanuzza M.;Taco R.
2021-01-01
Abstract
In this work, we are studying the effect of the technology scaling for different full-wave rectifier topologies using the Cross-Coupled Differential Drive (CCDD) strategy to implement a multiplier. For a conventional CCDD scaling from 90nm to 32nm, the PCE and VCE are maintained the same while a large degradation of the dynamic range and sensitivity are observed. This effect could be slightly limited by using a self-body bias CCDD topology. However, the use of TFET enables to avoid this degradation and provide a large VCE and output voltage for input voltage lower than 300mV. To extend this VCE for input voltage>300mV, we use a CCDD topology increasing the loading drive capability. Interestingly, this resulted not only on increasing the output voltage for large Vin but also demonstrated larger PCE than expected for this topology.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.