The unique properties of spin-transfer torque magnetic tunnel junctions (STT-MTJs) have led to promising designs for logic and memory applications. Additionally, STT-MTJ based circuits have shown attractive potential to design efficient non-volatile logic-in-memory (NV-LIM) architectures, which assure low power and increased speed. This paper proposes a bit-level reconfigurable NV logic circuit based on hybrid CMOS/STT-MTJ design. Indeed, our circuit can adapt on-demand its structure, thus offering intrinsic flexibility to perform basic logic functions (i.e. AND/OR/XOR) by a single circuit architecture. Post-layout simulation results prove that the proposed circuit leads to increase both delay and energy consumption with respect to state-of-the-art non-reconfigurable designs. However, its reconfigurable operation capability is very attractive to reduce area occupation and to increase design flexibility of NV-LIM systems.

Reconfigurable CMOS/STT-MTJ Non-Volatile Circuit for Logic-in-Memory Applications

Garzon Esteban
;
2020

Abstract

The unique properties of spin-transfer torque magnetic tunnel junctions (STT-MTJs) have led to promising designs for logic and memory applications. Additionally, STT-MTJ based circuits have shown attractive potential to design efficient non-volatile logic-in-memory (NV-LIM) architectures, which assure low power and increased speed. This paper proposes a bit-level reconfigurable NV logic circuit based on hybrid CMOS/STT-MTJ design. Indeed, our circuit can adapt on-demand its structure, thus offering intrinsic flexibility to perform basic logic functions (i.e. AND/OR/XOR) by a single circuit architecture. Post-layout simulation results prove that the proposed circuit leads to increase both delay and energy consumption with respect to state-of-the-art non-reconfigurable designs. However, its reconfigurable operation capability is very attractive to reduce area occupation and to increase design flexibility of NV-LIM systems.
978-1-7281-3427-7
logic-in-memory (LIM)
Magnetic tunnel junction (MTJ)
non-volatile logic gates
spin-transfer torque (STT)
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/339527
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