By means of angle-resolved photoemission spectroscopy measurements, the electronic band structure of the three-dimensional PbBi4Te7 and PbBi6Te10 topological insulators is compared. The measurements clearly reveal coexisting topological and multiple Rashba-like split states close to the Fermi level for both systems. The observed topological states derive from different surface terminations, as confirmed by scanning tunneling microscopy measurements, and are well-described by the density functional theory simulations. Both the topological and the Rashba-like states reveal a prevalent two-dimensional character barely affected by air exposure. X-ray and valence band photoemission measurements suggest Rashba-like states stem from the van der Waals gap expansion, consistently with density functional theory calculations.

Deep Insight Into the Electronic Structure of Ternary Topological Insulators: A Comparative Study of PbBi4Te7and PbBi6Te10

M. Pisarra
Membro del Collaboration Group
;
O. De Luca
Membro del Collaboration Group
;
I. Grimaldi
Membro del Collaboration Group
;
A. Goldoni
Membro del Collaboration Group
;
M. Papagno
Membro del Collaboration Group
2018-01-01

Abstract

By means of angle-resolved photoemission spectroscopy measurements, the electronic band structure of the three-dimensional PbBi4Te7 and PbBi6Te10 topological insulators is compared. The measurements clearly reveal coexisting topological and multiple Rashba-like split states close to the Fermi level for both systems. The observed topological states derive from different surface terminations, as confirmed by scanning tunneling microscopy measurements, and are well-described by the density functional theory simulations. Both the topological and the Rashba-like states reveal a prevalent two-dimensional character barely affected by air exposure. X-ray and valence band photoemission measurements suggest Rashba-like states stem from the van der Waals gap expansion, consistently with density functional theory calculations.
2018
density functional theory
electronic structure
photoemission
scanning tunneling microscopy
topological insulators
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/386238
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