In this paper, we propose a sub-1-V nanopower current reference based on dual-threshold voltage current mirror stages, used to compensate the temperature dependence of the current of a diode-connected transistor operating in deep subthreshold region. The proposed solution has been designed in a 0.18 μm CMOS technology and analyzed through circuit simulations. Simulation results show an output current of about 16 nA and a power consumption below 20 nW at the minimum operating voltage of 0.6 V and at the room temperature. The line sensitivity is 5.4 %/V, while the temperature coefficient is 274 ppm/°C. When compared to other state-of-the-art nanopower solutions, the proposed scheme proves to be a competitive candidate thanks to the low minimum operating voltage and the small area occupation.

Design of a sub-1-V nanopower CMOS current reference

De Rose, Raffaele;Albano, Domenico;Crupi, Felice;Lanuzza, Marco
2017

Abstract

In this paper, we propose a sub-1-V nanopower current reference based on dual-threshold voltage current mirror stages, used to compensate the temperature dependence of the current of a diode-connected transistor operating in deep subthreshold region. The proposed solution has been designed in a 0.18 μm CMOS technology and analyzed through circuit simulations. Simulation results show an output current of about 16 nA and a power consumption below 20 nW at the minimum operating voltage of 0.6 V and at the room temperature. The line sensitivity is 5.4 %/V, while the temperature coefficient is 274 ppm/°C. When compared to other state-of-the-art nanopower solutions, the proposed scheme proves to be a competitive candidate thanks to the low minimum operating voltage and the small area occupation.
9781538639740
CMOS analog design; current reference; low-power design; low-voltage design; subthreshold operation; Hardware and Architecture; Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/268368
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