In this paper, we propose a variation-tolerant design methodology to embed self-write termination control in spin-transfer torque (STT) magnetic tunnel junction (MTJ)-based non-volatile flip-flops (NVFFs). Because unnecessary MTJ writing operations are completely avoided, the average backup time and energy are more than halved with respect to conventional NVFFs (i.e. without an embedded self-write termination mechanism) for a write failure rate of 10-12. Such benefits are obtained while maintaining low design complexity and without significantly affecting the active mode of operation.

An energy aware variation-tolerant writing termination control for STT-based non volatile flip-flops

Lanuzza M.
;
De Rose R.;Crupi F.;
2019

Abstract

In this paper, we propose a variation-tolerant design methodology to embed self-write termination control in spin-transfer torque (STT) magnetic tunnel junction (MTJ)-based non-volatile flip-flops (NVFFs). Because unnecessary MTJ writing operations are completely avoided, the average backup time and energy are more than halved with respect to conventional NVFFs (i.e. without an embedded self-write termination mechanism) for a write failure rate of 10-12. Such benefits are obtained while maintaining low design complexity and without significantly affecting the active mode of operation.
978-1-7281-0996-1
Digital circuits; Energy efficiency; Non-volatile flip-flop; STT-MRAM; VLSI; Zero-leakage circuits
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11770/303196
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