Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductor-based technology. In this work, we extend a model for Armchair Graphene Nanoribbons Field-Effect Transistor (AGNRFET) to the high-k dielectrics realm and examine the influences of quantum capacitance on its transient phenomena. The model is coded with Verilog-A and evaluated through SPICE simulations. We have considered a comparison between the extended model with and without the influence of the quantum capacitance. Simulation results show a realistic scenario where influence of the quantum capacitance significantly impacts the transient behaviour in circuit design. This proves the proposed model to be a valuable aid for the circuit design of future graphene-based applications.
Quantum capacitance transient phenomena in high-k dielectric armchair graphene nanoribbon field-effect transistor model
Garzon E.;Lanuzza M.;
2021-01-01
Abstract
Graphene Nanoribbons (GNRs) are an emerging candidate to challenge the place of current semiconductor-based technology. In this work, we extend a model for Armchair Graphene Nanoribbons Field-Effect Transistor (AGNRFET) to the high-k dielectrics realm and examine the influences of quantum capacitance on its transient phenomena. The model is coded with Verilog-A and evaluated through SPICE simulations. We have considered a comparison between the extended model with and without the influence of the quantum capacitance. Simulation results show a realistic scenario where influence of the quantum capacitance significantly impacts the transient behaviour in circuit design. This proves the proposed model to be a valuable aid for the circuit design of future graphene-based applications.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.