This work introduces a class of voltage references able to operate down to 3.2 pW and 0.2-V supply for energy harvesting with relaxed or suppressed voltage regulation (direct harvesting). Inherent wafer-to-wafer process sensitivity limitations and effect of process corners in deep sub-threshold are mitigated via a selection/combination of circuit replicas driven by a process sensor, at zero testing effort and trimming. A 180-nm testchip shows 1.6% process sensitivity (including wafer-to-wafer variations), 60.7-V/V line sensitivity, and 34.9- V/°C temperature coefficient, leading to 1.4-mV overall accuracy across corner wafers.

A 3.2-pW, 0.2-V Trimming-Less Voltage Reference with 1.4-mV Across-Wafer Total Accuracy

Fassio L.;De Rose R.;Lanuzza M.;Crupi F.;
2021-01-01

Abstract

This work introduces a class of voltage references able to operate down to 3.2 pW and 0.2-V supply for energy harvesting with relaxed or suppressed voltage regulation (direct harvesting). Inherent wafer-to-wafer process sensitivity limitations and effect of process corners in deep sub-threshold are mitigated via a selection/combination of circuit replicas driven by a process sensor, at zero testing effort and trimming. A 180-nm testchip shows 1.6% process sensitivity (including wafer-to-wafer variations), 60.7-V/V line sensitivity, and 34.9- V/°C temperature coefficient, leading to 1.4-mV overall accuracy across corner wafers.
2021
978-1-6654-3751-6
corner-aware
energy harvesting
ultra-low voltage
Voltage reference
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/325854
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