Dynamic comparators play an important role in electronic systems, requiring high accuracy, low power consumption, and minimal offset voltage. This work proposes an accurate and low-complexity offset calibration design based on a capacitive load approach. It was designed using a 65 nm CMOS technology and comprehensively evaluated under Monte Carlo simulations and PVT variations. The proposed scheme was built using MIM capacitors and transistor-based capacitors, and it includes Verilog-based calibration algorithms. The proposed offset calibration is benchmarked, in terms of precision, calibration time, energy consumption, delay, and area, against prior calibration techniques: current injection via gate biasing by a charge pump circuit and current injection via parallel transistors. The evaluation of the offset calibration schemes relies on Analog/Mixed-Signal (AMS) simulations, ensuring accurate evaluation of digital and analog domains. The charge pump method achieved the best Energy-Delay Product (EDP) at the cost of lower long-term accuracy, mainly because of its capacitor leakage. The proposed scheme demonstrated superior performance in offset reduction, achieving a one-sigma offset of 0.223 mV while maintaining precise calibration. Among the calibration algorithms, the window algorithm performs better than the accelerated calibration. This is mainly because the window algorithm considers noise-induced output oscillations, ensuring consistent calibration across all designs. This work provides insights into the trade-offs between energy, precision, and area in dynamic comparator designs, offering strategies to enhance offset calibration.
An Accurate and Low-Complexity Offset Calibration Methodology for Dynamic Comparators
Cuenca, Juan;Zambrano, Benjamin;Garzon, Esteban
;Lanuzza, Marco
2025-01-01
Abstract
Dynamic comparators play an important role in electronic systems, requiring high accuracy, low power consumption, and minimal offset voltage. This work proposes an accurate and low-complexity offset calibration design based on a capacitive load approach. It was designed using a 65 nm CMOS technology and comprehensively evaluated under Monte Carlo simulations and PVT variations. The proposed scheme was built using MIM capacitors and transistor-based capacitors, and it includes Verilog-based calibration algorithms. The proposed offset calibration is benchmarked, in terms of precision, calibration time, energy consumption, delay, and area, against prior calibration techniques: current injection via gate biasing by a charge pump circuit and current injection via parallel transistors. The evaluation of the offset calibration schemes relies on Analog/Mixed-Signal (AMS) simulations, ensuring accurate evaluation of digital and analog domains. The charge pump method achieved the best Energy-Delay Product (EDP) at the cost of lower long-term accuracy, mainly because of its capacitor leakage. The proposed scheme demonstrated superior performance in offset reduction, achieving a one-sigma offset of 0.223 mV while maintaining precise calibration. Among the calibration algorithms, the window algorithm performs better than the accelerated calibration. This is mainly because the window algorithm considers noise-induced output oscillations, ensuring consistent calibration across all designs. This work provides insights into the trade-offs between energy, precision, and area in dynamic comparator designs, offering strategies to enhance offset calibration.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.


