Sfoglia per Rivista IEEE TRANSACTIONS ON ELECTRON DEVICES
A Temperature All-Silicon Micro-Sensor Based on the Thermo-Optic Effect
1997-01-01 Cocorullo, Giuseppe; F. G., DELLA CORTE; M., Iodice; I., Rendina; P. M., Sarro
A measurement technique to obtain the recombination lifetime profile in epi layers at any injection level
1987-01-01 Spirito, P; Cocorullo, Giuseppe
A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering
2011-01-01 Giusi, G; Iannaccone, G; Crupi, Felice
A novel methodology for sensing the breakdown location and its application to the reliability study of ultrathin Hf-silicate gate dielectrics
2005-01-01 Crupi, Felice; Kauerauf, T; Degraeve, R; Pantisano, L; Groeseneken, G.
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits
2016-01-01 Strangio, S; Palestri, P; Lanuzza, Marco; Crupi, Felice; Esseni, D; Selmi, L.
Barrier Lowering and Backscattering Extraction in Short-Channel MOSFETs
2010-01-01 Giusi, G; Iannaccone, G; Maji, D; Crupi, Felice
Bipolar Mode Operation and Scalability of Double-Gate Capacitorless 1T-DRAM Cells
2010-01-01 Giusi, G; Alam, Ma; Crupi, Felice; Pierro, S.
Characterization and Modeling of Hot Carrier-Induced Variability in Subthreshold Region
2012-01-01 Magnone, P; Crupi, Felice; Wils, N; Tuinhout, Hp; Fiegna, C.
Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current
2001-01-01 Crupi, Felice; Iannaccone, G; Crupi, I; Degraeve, R; Groeseneken, G; Maes, He
A Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJs
2017-01-01 De Rose, Raffaele; Lanuzza, Marco; D'Aquino, Massimiliano; Carangelo, Greta; Finocchio, Giovanni; Crupi, Felice; Carpentieri, Mario
Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics
2006-01-01 Giusi, G; Crupi, Felice; Pace, Calogero; Ciofi, C; Groeseneken, G.
CURRENT GAIN ENHANCEMENT EFFECT BY GATE DOPING IN BIPOLAR-MODE FIELD-EFFECT TRANSISTOR
1990-01-01 Bellone, S; Cocorullo, Giuseppe; Fallica, G; Musumeci, S.
FinFET Mismatch in Subthreshold Region: Theory and Experiments
2010-01-01 Magnone, P; Crupi, Felice; Mercha, A; Andricciola, P; Tuinhout, H; Lander, Rjp
Impact of High-Mobility Materials on the Performance of Near- and Sub-Threshold CMOS Logic Circuits
2013-01-01 Crupi, Felice; Albano, D; Alioto, M; Franco, J; Selmi, L; Mitard, J; Groeseneken, G.
Impact of Hot Carriers on nMOSFET Variability in 45-and 65-nm CMOS Technologies
2011-01-01 Magnone, P; Crupi, Felice; Wils, N; Jain, R; Tuinhout, H; Andricciola, P; Giusi, G; Fiegna, C.
Influence of GaN- and Si 3 N 4 -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination
2019-01-01 Acurio, Eliana; Crupi, Felice; Ronchi, Nicolo; De Jaeger, Brice; Bakeroot, Benoit; Decoutere, Stefaan; Trojman, Lionel
Low frequency noise and gate bias instability in normally off AlGaN/GaN HEMTs
2016-01-01 Crupi, Felice; Magnone, P; Strangio, S; Iucolano, F; Meneghesso, G.
Measurement of recombination lifetime profiles in epilayers using a conductivity modulation technique
1985-01-01 Spirito, P; Cocorullo, Giuseppe
Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain
2015-01-01 Lanuzza, Marco; Strangio, S; Crupi, Felice; Palestri, P; Esseni, D.
Modeling of tunnelling currents in Hf-based gate stacks as a function of temperature and extraction of material parameters
2007-01-01 Campera, A; Iannaccone, G; Crupi, Felice
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