Sfoglia per Autore
VARIATIONAL METHODS FOR THE STEADY-STATE BOLTZMANN EQUATION FOR SEMICONDUCTORS
2006-01-01 Alì, G; Anile, A. M.; Mascali, Giovanni
A Hydrodynamical Model for Silicon Bipolar Devices
2006-01-01 Mascali, Giovanni; Liotta, S. F.
Hole mobility in Silicon semiconductors, Proceedings of SCEE 2004, Capo D’Orlando
2006-01-01 Mascali, Giovanni; Romano, V; Sellier, J. M.
Scientific Computing in Electrical Engineering
2006-01-01 Alì, G; Anile, A. M.; Mascali, Giovanni
Gunn Oscillations described by the MEP hydrodynamical model of semiconductors,
2006-01-01 Mascali, Giovanni; Romano, V; Sellier, J. M.
AN EXTENDED HYDRODYNAMICAL MODEL FOR CHARGE TRANSPORT IN SI
2007-01-01 Mascali, Giovanni; Beneduci, R; Romano, V.
Nonlinear Exact Closure for the Hydrodynamical Model of Semiconductors based on the Maximum Entropy Principle
2007-01-01 Mascali, Giovanni; Romano, V.
THE SEMICONDUCTOR STEADY BOLTZMANN EQUATION: A VARIATIONAL FORMULATION
2007-01-01 Ali', Giuseppe; Anile, A. M.; Mascali, Giovanni
Generalized observables in stochastic quantum models in phase space
2008-01-01 Mascali, Giovanni; Alì, G; Beneduci, R.
Closure relations: a case from semiconductors
2008-01-01 Mascali, Giovanni; LA ROSA, S; Romano, V.
EXACT MAXIMUM ENTROPY CLOSURE OF THE HYDRODYNAMICAL MODEL FOR SI SEMICONDUCTORS: THE 8-MOMENT CASE
2009-01-01 LA ROSA, S; Mascali, Giovanni; Romano, V.
A comparison between two hydrodynamical models for hole transport in Si semiconductors
2010-01-01 Mascali, Giovanni; Romano, V.
Hyperbolic PDAEs for semiconductor devices coupled with circuits
2010-01-01 Ali', Giuseppe; Mascali, Giovanni; Pulch, R.
Nonlinear models for silicon semiconductors
2010-01-01 LA ROSA, S; Mascali, Giovanni; Romano, V.
HYDRODYNAMIC SUBBAND MODEL FOR SEMICONDUCTORS BASED ON THE MAXIMUM ENTROPY PRINCIPLE
2010-01-01 Mascali, Giovanni; Romano, V.
Numerical simulation of a subband model based on the Maximum Entropy Principle
2010-01-01 Mascali, Giovanni; Romano, V.
A HYDRODYNAMICAL MODEL FOR HOLE TRANSPORT IN SILICON SEMICONDUCTORS: THE CASE OF WARPED NON-PARABOLIC BANDS
2011-01-01 Mascali, Giovanni; Romano, V.
Numerical simulation of a hydrodynamic subband model for semiconductors based on the maximum entropy principle
2012-01-01 Mascali, Giovanni; Romano, V.
A NON PARABOLIC HYDRODYNAMICAL SUBBAND MODEL FOR SEMICONDUCTORS BASED ON THE MAXIMUM ENTROPY PRINCIPLE
2012-01-01 Mascali, Giovanni; Romano, V.
NUMERICAL SIMULATION OF A DOUBLE-GATE MOSFET WITH A SUBBAND MODEL FOR SEMICONDUCTORS BASED ON THE MAXIMUM ENTROPY PRINCIPLE
2012-01-01 Camiola, V. D.; Mascali, Giovanni; Romano, V.
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