TROJMAN, LIONEL
 Distribuzione geografica
Continente #
NA - Nord America 203
AS - Asia 160
EU - Europa 98
SA - Sud America 29
AF - Africa 8
Totale 498
Nazione #
US - Stati Uniti d'America 200
SG - Singapore 74
CN - Cina 37
UA - Ucraina 26
DE - Germania 23
BR - Brasile 20
SE - Svezia 18
HK - Hong Kong 17
VN - Vietnam 14
FI - Finlandia 11
IT - Italia 6
IN - India 5
AR - Argentina 4
AT - Austria 4
SN - Senegal 4
BE - Belgio 3
IQ - Iraq 3
KR - Corea 3
ZA - Sudafrica 3
BD - Bangladesh 2
EC - Ecuador 2
JO - Giordania 2
MX - Messico 2
PY - Paraguay 2
AZ - Azerbaigian 1
CA - Canada 1
CH - Svizzera 1
EG - Egitto 1
ES - Italia 1
GB - Regno Unito 1
ID - Indonesia 1
IE - Irlanda 1
LV - Lettonia 1
NL - Olanda 1
RU - Federazione Russa 1
TR - Turchia 1
UY - Uruguay 1
Totale 498
Città #
Chandler 45
Singapore 39
Jacksonville 16
Hong Kong 15
Dearborn 14
Ashburn 11
Helsinki 11
Beijing 10
Boardman 10
Dallas 6
San Mateo 6
Bremen 5
Shanghai 5
Brooklyn 4
Council Bluffs 4
Dakar 4
Ho Chi Minh City 4
Lawrence 4
Roxbury 4
The Dalles 4
Vienna 4
Brussels 3
Columbus 3
Hanoi 3
Los Angeles 3
Seoul 3
Wilmington 3
Amman 2
Chicago 2
Curitiba 2
Da Nang 2
Falkenstein 2
Hefei 2
Jaswantnagar 2
Milan 2
Munich 2
New York 2
San Justo 2
Amsterdam 1
Aparecida de Goiânia 1
Arujá 1
Asunción 1
Atlanta 1
Baghdad 1
Baku 1
Banhā 1
Bom Jesus 1
Brasília 1
Buffalo 1
Caacupé 1
Cabo Frio 1
Cambridge 1
Can Tho 1
Cape Town 1
Capelinha 1
Central District 1
Changsha 1
Charlotte 1
Contagem 1
Córdoba 1
Des Moines 1
Dublin 1
Erbil 1
Guayaquil 1
Gustavo Adolfo Madero 1
Haiphong 1
Hangzhou 1
Hanover 1
Hartsville 1
Hải Dương 1
Ibiporã 1
Ibirité 1
Izmir 1
Jakarta 1
Johannesburg 1
Lausanne 1
Lucknow 1
Lấp Vò 1
Mexico City 1
Montevideo 1
Mumbai 1
Muriaé 1
Norwalk 1
Ogden 1
Osceola 1
Otradnoye 1
Ottawa 1
Ourense 1
Padova 1
Palmas 1
Parauapebas 1
Phoenix 1
Poltava 1
Pretoria 1
Quitilipi 1
Quito 1
Riga 1
Salvador 1
Santo Antônio de Pádua 1
Seelze 1
Totale 327
Nome #
Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework 125
Influence of GaN- and Si 3 N 4 -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination 108
Reliability in GaN-based devices for power applications 104
Reliability improvements in AlGaN/GaN schottky barrier diodes with a gated edge termination 101
Low-Cost Smart Living Environment Monitoring Systems from a Metrological Point of View 66
Totale 504
Categoria #
all - tutte 3.519
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.519


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202112 0 0 0 0 0 4 0 4 0 4 0 0
2021/202250 0 6 0 9 5 0 0 9 1 3 5 12
2022/202389 13 9 3 13 12 13 0 9 8 0 3 6
2023/202462 8 5 1 5 5 2 1 15 2 1 7 10
2024/2025103 1 10 7 12 5 15 1 11 9 2 9 21
2025/2026125 30 6 18 17 48 6 0 0 0 0 0 0
Totale 504