This paper deals with the technology scalability of spin-transfer torque magnetic RAMs (STT-MRAMs)based on nanoscaled perpendicular magnetic tunnel junctions (MTJs)and FinFET technology. Our study was performed at different levels of abstraction, from device- up to architecture-level passing through a circuit-level analysis for the single memory bitcell. Simulation results obtained for a 512 KB cache memory show that scaling from the 28-nm down to the 20-nm technology node leads to reduced write latency (−20%)and lower energy consumption under both write (−36%)and read (−29%)accesses, while also ensuring an almost doubled integration density. This occurs at the expense of slightly reduced sensing margins and higher read latency (+5%), and of a degradation in the data retention capability owing to the reduced MTJ thermal stability.

Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework

Garzon E.
Membro del Collaboration Group
;
De Rose R.;Crupi F.;Trojman L.;Lanuzza M.
2019

Abstract

This paper deals with the technology scalability of spin-transfer torque magnetic RAMs (STT-MRAMs)based on nanoscaled perpendicular magnetic tunnel junctions (MTJs)and FinFET technology. Our study was performed at different levels of abstraction, from device- up to architecture-level passing through a circuit-level analysis for the single memory bitcell. Simulation results obtained for a 512 KB cache memory show that scaling from the 28-nm down to the 20-nm technology node leads to reduced write latency (−20%)and lower energy consumption under both write (−36%)and read (−29%)accesses, while also ensuring an almost doubled integration density. This occurs at the expense of slightly reduced sensing margins and higher read latency (+5%), and of a degradation in the data retention capability owing to the reduced MTJ thermal stability.
Device-to-memory analysis; FinFET; Magnetic tunnel junction (MTJ); STT-MRAM; Technology scaling
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/20.500.11770/295376
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 19
  • ???jsp.display-item.citation.isi??? 12
social impact