This paper presents a comparative study on non-volatile cache memories based on nanoscaled spin-transfer torque (STT)-magnetic tunnel junctions (MTJs). In particular, the impact of using double-barrier MTJs (DMTJs) instead of conventional single-barrier MTJs (SMTJs) is evaluated through a device-to-system level simulation framework. Simulation results demonstrate that DMTJ-based STT-MRAMs are promising competitors for the next generation of non-volatile cache memories.
Device-to-system level simulation framework for STT-DMTJ based cache memory
Garzon E.
;De Rose R.;Crupi F.;Lanuzza M.
2019-01-01
Abstract
This paper presents a comparative study on non-volatile cache memories based on nanoscaled spin-transfer torque (STT)-magnetic tunnel junctions (MTJs). In particular, the impact of using double-barrier MTJs (DMTJs) instead of conventional single-barrier MTJs (SMTJs) is evaluated through a device-to-system level simulation framework. Simulation results demonstrate that DMTJ-based STT-MRAMs are promising competitors for the next generation of non-volatile cache memories.File in questo prodotto:
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