We analyze the scalability of a spin-orbit torque random access memory (SOT-MRAM)-based physical unclonable function (PUF) at the nanoscale size by means of a hybrid CMOS/spintronics simulation framework. The properties of the SOT-MRAM device (diameters from 100 nm down to 25 nm) are computed via micromagnetic simulations, whereas their implications for PUF applications are evaluated at the circuit level in terms of energy characteristics and security metrics. Obtained results prove that the implementation of 2 b xor operations in the designed PUF circuit achieves randomness and uniqueness very close to the ideality.

Impact of Scaling on Physical Unclonable Function Based on Spin-Orbit Torque

De Rose R.;Crupi F.;Lanuzza M.;Carpentieri M.
2020

Abstract

We analyze the scalability of a spin-orbit torque random access memory (SOT-MRAM)-based physical unclonable function (PUF) at the nanoscale size by means of a hybrid CMOS/spintronics simulation framework. The properties of the SOT-MRAM device (diameters from 100 nm down to 25 nm) are computed via micromagnetic simulations, whereas their implications for PUF applications are evaluated at the circuit level in terms of energy characteristics and security metrics. Obtained results prove that the implementation of 2 b xor operations in the designed PUF circuit achieves randomness and uniqueness very close to the ideality.
CMOS/spintronic circuit
micromagnetics
physical unclonable function
Spin electronics
spin-orbit torque random access memory
three-Terminal devices
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/20.500.11770/310031
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