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Titolo Data di pubblicazione Autore(i) File
A new method for high sensitivity noise measurements 1-gen-2001 Ciofi, C.; Crupi, Felice; Pace, Calogero
Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current 1-gen-2001 Crupi, Felice; Iannaccone, G; Crupi, I; Degraeve, R; Groeseneken, G; Maes, He
Softening of breakdown in ultra-thin gate oxide nMOSFETs at low inversion layer density 1-gen-2001 Lombardo, S; Crupi, Felice; Stathis, Jh
Reduction of thermal damage in ultrathin gate oxides after intrinsic dielectric breakdown 1-gen-2001 Lombardo, S; La Magna, A; Crupi, I; Gerardi, C; Crupi, Felice
Understanding nMOSFET characteristics after soft breakdown and their dependence on the breakdown location 1-gen-2002 Kaczer, B; Degraeve, R; DE KEERSGIETER, A; Groeseneken, G; Crupi, Felice
Very low noise, high accuracy, programmable voltage reference 1-gen-2002 Pace, Calogero; Ciofi, C.; Crupi, Felice; Giacobbe, A.
Observation of hot-carrier-induced nFET gate-oxide breakdown in dynamically stressed CMOS circuits 1-gen-2002 Kaczer, B; Crupi, Felice; Degraeve, R; Roussel, P; Ciofi, C; Groeseneken, G.
Location and hardness of the oxide breakdown in short channel n- and p-MOSFETs 1-gen-2002 Crupi, Felice; Kaczer, B; Degraeve, R; DE KEERSGIETER, A; Groeseneken, G.
Dedicated probe system for wafer level noise measurements in MOS devices 1-gen-2002 Ciofi, C.; Crupi, Felice; Pace, Calogero; Scandurra, G.; Sturniolo, P.
A new method for high-sensitivity noise measurements 1-gen-2002 Ciofi, C; Crupi, Felice; Pace, Calogero
On the role of interface states in low-voltage leakage currents of metal-oxide-semiconductor structures 1-gen-2002 Crupi, Felice; Ciofi, C; Germano, A; Iannaccone, G; Stathis, Jh; Lombardo, S.
Low frequency current noise in unstressed/stressed thin oxide metal-oxide-semiconductor capacitors 1-gen-2002 Crupi, Felice; Iannaccone, G; Ciofi, C; Neri, B; Lombardo, S; Pace, Calogero
Modeling pFET currents after soft breakdown at different gate locations 1-gen-2003 Kaczer, B; DE KEERSGIETER, A; Degraeve, R; Crupi, Felice; Groeseneken, G.
Gate current noise evolution and dielectric breakdown of MOS microstructures 1-gen-2003 Crupi, Felice; Neri, B.
A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes 1-gen-2003 Crupi, Felice; Kaczer, B; Degraeve, R; De Keersgieter, A; Groeseneken, G.
Micro-prober for wafer-level low-noise measurements in MOS devices 1-gen-2003 Ciofi, C; Crupi, Felice; Pace, Calogero; Scandurra, G.
New insights into the relation between channel hot carrier degradation and oxide breakdown in short channel nMOSFETs 1-gen-2003 Crupi, Felice; Kaczer, B; Groeseneken, G; De Keersgieter, A.
Very low noise, high accuracy, programmable voltage reference 1-gen-2003 Pace, Calogero; Ciofi, C; Crupi, Felice
Theory and experiment of suppressed shot noise in stress-induced leakage currents 1-gen-2003 Iannaccone, G; Crupi, Felice; Neri, B; Lombardo, S.
Reliability issues in high-k stacks 1-gen-2004 Degraeve, R; Crupi, Felice; Houssa, M; Kwak, Dh; Kerber, A; Cartier, E; Kauerauf, T; Roussel, P; Autran, Jl; Pourtois, G; Pantisano, L; Degendt, S; Heyns, M; Groeseneken, G.
Mostrati risultati da 21 a 40 di 255
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