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Titolo Data di pubblicazione Autore(i) File
Reliability issues in high-k stacks 1-gen-2004 Degraeve, R; Crupi, Felice; Houssa, M; Kwak, Dh; Kerber, A; Cartier, E; Kauerauf, T; Roussel, P; Autran, Jl; Pourtois, G; Pantisano, L; Degendt, S; Heyns, M; Groeseneken, G.
Modeling pFET currents after soft breakdown at different gate locations 1-gen-2004 Kaczer, B; De Keersgieter, A; Degraeve, R; Crupi, Felice; Groeseneken, G.
Improved trade-off between noise and bandwidth in op-amp based transimpedance amplifier 1-gen-2004 Ciofi, C.; Crupi, Felice; Pace, Calogero; Scandurra, G.
On the defect generation and low voltage extrapolation of QBD in SiO2/HfO2 stacks 1-gen-2004 Degraeve, R; Crupi, Felice; Kwak, Dh; Groeseneken, G.
A new technique for extracting the MOSFET threshold voltage using noise measurements 1-gen-2004 Giusi, G; Donato, N; Ciofi, C; Crupi, Felice
Extraction of the trap distribution responsible for SILCs in MOS structures from measurements and simulations of DC and noise properties 1-gen-2004 Nannipieri, A; Iannaccone, G; Crupi, Felice
Hot carrier degradation on n-channel HfSiON MOSFETs: effects on the device performance and lifetime 1-gen-2005 Cimino, S; Pantisano, L; Aoulaiche, M; Degraeve, R; Kwak, Dh; Crupi, Felice; Groeseneken, G; Paccagnella, A.
A novel ultra sensitive method for voltage noise measurements 1-gen-2005 Crupi, Felice; Giusi, G; Ciofi, C; Pace, Calogero
Extraction of physical parameters of alternative high-k gate stacks through comparison between measurements and quantum simulations 1-gen-2005 Campera, A; Iannaccone, G; Crupi, Felice; Groeseneken, G.
Strumento elettronico ad elevatissima sensibilità per misura del rumore di tensione di un bipolo 1-gen-2005 Crupi, Felice; Giusi, G; Ciofi, C; Pace, Calogero
Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics 1-gen-2005 Crupi, Felice; Pace, Calogero; Cocorullo, Giuseppe; Groeseneken, G; Aoulaiche, M; Houssa, M.
Trap generation and progressive wearout in thin HfSiON 1-gen-2005 Kauerauf, T; Degraeve, R; Crupi, Felice; Kaczer, B; Groeseneken, G; Maes, He
A novel methodology for sensing the breakdown location and its application to the reliability study of ultrathin Hf-silicate gate dielectrics 1-gen-2005 Crupi, Felice; Kauerauf, T; Degraeve, R; Pantisano, L; Groeseneken, G.
Room-temperature single-electron effects in silicon nanocrystal memories 1-gen-2005 Pace, Calogero; Crupi, Felice; Lombardo, S.; Gerardi, C.; Cocorullo, G.
Threshold voltage instability and low frequency noise in Hafnium-based gate dielectrics 1-gen-2006 Crupi, Felice
Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics 1-gen-2006 Giusi, G; Crupi, Felice; Pace, Calogero; Ciofi, C; Groeseneken, G.
Low-frequency (1/f) noise behavior of locally stressed HfO2/TiN gate-stack pMOSFETs 1-gen-2006 Giusi, G; Simoen, E; Eneman, G; Verheyen, P; Crupi, Felice; De Meyer, K; Claeys, C; Ciofi, C.
Three-channel amplifier for high-sensitivity voltage noise measurements 1-gen-2006 Giusi, G; Crupi, Felice; Ciofi, C; Pace, Calogero
Ultrasensitive method for current noise measurements 1-gen-2006 Giusi, G; Crupi, Felice; Ciofi, C; Pace, Calogero
Enhanced sensitivity cross-correlation method for voltage noise measurements 1-gen-2006 Crupi, Felice; Giusi, G; Ciofi, C; Pace, Calogero
Mostrati risultati da 41 a 60 di 255
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