Sfoglia per Rivista  IEEE ELECTRON DEVICE LETTERS

Opzioni
Vai a: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Mostrati risultati da 1 a 12 di 12
Titolo Data di pubblicazione Autore(i) File
A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-MOSFET 1-gen-2011 Giusi, G; Iannaccone, G; Crupi, Felice; Ravaioli, U.
Border Traps in InGaAs nMOSFETs Assessed by Low-Frequency Noise 1-gen-2014 Scarpino, M; Gupta, S; Lin, D; Alian, A; Crupi, Felice; Collaert, N; Thean, A; Simoen, E.
Defect-Centric Distribution of Channel Hot Carrier Degradation in Nano-MOSFETs 1-gen-2014 Procel, Lm; Crupi, Felice; Franco, J; Trojman, L; Kaczer, B.
High-voltage bipolar mode JFET with normally off characteristics 1-gen-1985 Bellone, S; Caruso, A; Spirito, P; Vitale, Gf; Busatto, G; Cocorullo, Giuseppe; Ferla, G; Musumeci, S.
Impact of the interfacial layer on the low-frequency noise (1/f) behavior of MOSFETs with advanced gate stacks 1-gen-2006 Crupi, Felice; Srinivasan, P; Magnone, P; Simoen, E; Pace, Calogero; Misra, D; Claeys, C.
Low-frequency (1/f) noise behavior of locally stressed HfO2/TiN gate-stack pMOSFETs 1-gen-2006 Giusi, G; Simoen, E; Eneman, G; Verheyen, P; Crupi, Felice; De Meyer, K; Claeys, C; Ciofi, C.
Matching Performance of FinFET Devices With Fin Widths Down to 10 nm 1-gen-2009 Magnone, P; Mercha, A; Subramanian, V; Parvais, P; Collaert, N; Dehan, M; Decoutere, S; Groeseneken, G; Benson, J; Merelle, T; Lander, R. J. P.; Crupi, Felice; Pace, Calogero
New insights into the relation between channel hot carrier degradation and oxide breakdown in short channel nMOSFETs 1-gen-2003 Crupi, Felice; Kaczer, B; Groeseneken, G; De Keersgieter, A.
On the impact of defects close to the gate electrode on the low-frequency 1/f noise 1-gen-2008 Magnone, P; Pantisano, L; Crupi, Felice; Trojman, L; Pace, Calogero; Giusi, G.
On the Temperature and Field Dependence of Trap-Assisted Tunneling Current in Ge p(+)n Junctions 1-gen-2009 Simoen, E; De Stefano, F; Eneman, G; De Jaeger, B; Claeys, C; Crupi, Felice
Pre-breakdown in thin SiO2 films 1-gen-2000 Crupi, Felice; Neri, B; Lombardo, S.
Recombination lifetime profiling in very thin Si epitaxial layers used for bipolar VLSI 1-gen-1989 Spirito, P; Bellone, S; Ransom, Cm; Busatto, G; Cocorullo, Giuseppe
Mostrati risultati da 1 a 12 di 12
Legenda icone

  •  file ad accesso aperto
  •  file disponibili sulla rete interna
  •  file disponibili agli utenti autorizzati
  •  file disponibili solo agli amministratori
  •  file sotto embargo
  •  nessun file disponibile