MASCALI, Giovanni
 Distribuzione geografica
Continente #
NA - Nord America 2.444
AS - Asia 2.431
EU - Europa 1.189
SA - Sud America 702
AF - Africa 95
OC - Oceania 4
Continente sconosciuto - Info sul continente non disponibili 2
Totale 6.867
Nazione #
US - Stati Uniti d'America 2.324
SG - Singapore 959
BR - Brasile 513
CN - Cina 465
VN - Vietnam 389
UA - Ucraina 372
DE - Germania 277
IT - Italia 191
HK - Hong Kong 182
FR - Francia 90
SE - Svezia 89
TR - Turchia 79
CA - Canada 72
BD - Bangladesh 68
AR - Argentina 58
KR - Corea 56
EC - Ecuador 40
IN - India 39
ID - Indonesia 36
GB - Regno Unito 32
MX - Messico 28
IQ - Iraq 26
ZA - Sudafrica 25
FI - Finlandia 24
RU - Federazione Russa 24
CO - Colombia 21
MA - Marocco 21
PK - Pakistan 17
PY - Paraguay 17
VE - Venezuela 17
BE - Belgio 16
MY - Malesia 14
SA - Arabia Saudita 12
UZ - Uzbekistan 12
CL - Cile 11
PH - Filippine 11
ES - Italia 10
KE - Kenya 10
SN - Senegal 10
UY - Uruguay 10
RO - Romania 9
BO - Bolivia 8
JP - Giappone 8
EG - Egitto 7
JO - Giordania 7
NP - Nepal 7
PL - Polonia 7
AE - Emirati Arabi Uniti 6
DZ - Algeria 6
IL - Israele 6
PE - Perù 6
PS - Palestinian Territory 5
AT - Austria 4
DO - Repubblica Dominicana 4
ET - Etiopia 4
JM - Giamaica 4
KZ - Kazakistan 4
LT - Lituania 4
PA - Panama 4
PT - Portogallo 4
EE - Estonia 3
KW - Kuwait 3
MD - Moldavia 3
TN - Tunisia 3
AL - Albania 2
AU - Australia 2
BG - Bulgaria 2
BH - Bahrain 2
BW - Botswana 2
CZ - Repubblica Ceca 2
GR - Grecia 2
HN - Honduras 2
HR - Croazia 2
IE - Irlanda 2
KG - Kirghizistan 2
LB - Libano 2
LU - Lussemburgo 2
LV - Lettonia 2
NL - Olanda 2
NZ - Nuova Zelanda 2
RS - Serbia 2
SI - Slovenia 2
SK - Slovacchia (Repubblica Slovacca) 2
SY - Repubblica araba siriana 2
TH - Thailandia 2
AD - Andorra 1
AF - Afghanistan, Repubblica islamica di 1
AM - Armenia 1
AO - Angola 1
AZ - Azerbaigian 1
BA - Bosnia-Erzegovina 1
BY - Bielorussia 1
CG - Congo 1
CH - Svizzera 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
CW - ???statistics.table.value.countryCode.CW??? 1
DM - Dominica 1
EU - Europa 1
FK - Isole Falkland (Malvinas) 1
Totale 6.850
Città #
Singapore 449
Jacksonville 301
Chandler 298
Hong Kong 180
San Jose 178
Ashburn 157
Boardman 148
Dearborn 145
San Mateo 138
Ho Chi Minh City 129
Beijing 120
Dallas 86
Hanoi 82
Florence 72
Council Bluffs 70
Lauterbourg 67
Lawrence 66
Roxbury 66
Izmir 63
Seoul 56
Hefei 55
Shanghai 51
Ann Arbor 49
Des Moines 47
Ottawa 43
Cambridge 32
São Paulo 32
Grafing 31
Haiphong 26
Rende 26
New York 24
Bremen 22
Helsinki 21
Da Nang 19
Guayaquil 18
Inglewood 18
Columbus 17
Los Angeles 17
Brussels 16
Ogden 16
Seattle 16
Rome 15
Wilmington 15
Guangzhou 14
Hải Dương 14
Toronto 14
Brooklyn 12
Dhaka 12
Frankfurt am Main 12
Paola 12
Baghdad 11
Curitiba 11
San Francisco 11
Santa Clara 11
Tashkent 11
Belo Horizonte 10
Campinas 10
Dakar 10
Munich 10
Rio de Janeiro 10
Asunción 9
Brasília 9
Medellín 9
Nairobi 9
Quito 9
Bucharest 8
Jakarta 8
Montevideo 8
Montreal 8
Ninh Bình 8
The Dalles 8
Tianjin 8
Johannesburg 7
London 7
Ribeirão Preto 7
Salvador 7
Thái Nguyên 7
Tokyo 7
Warsaw 7
Amman 6
Atlanta 6
Biên Hòa 6
Bogotá 6
Bắc Ninh 6
Cape Town 6
Chicago 6
Contagem 6
Guarulhos 6
Ha Long 6
Hortolândia 6
Kuala Lumpur 6
Niterói 6
Porto Alegre 6
Quảng Ngãi 6
Riyadh 6
Santiago 6
Thái Bình 6
Casablanca 5
Charlotte 5
Goiânia 5
Totale 3.965
Nome #
A HYDRODYNAMICAL MODEL FOR HOLE TRANSPORT IN SILICON SEMICONDUCTORS: THE CASE OF WARPED PARABOLIC BANDS 142
A HYDRODYNAMICAL MODEL FOR COVALENT SEMICONDUCTORS, WITH A GENERALIZED ENERGY DISPERSION RELATION 131
Charge and Phonon Transport in Suspended Monolayer Graphene 130
Charge Transport in Low Dimensional Semiconductor Structures 128
A Hydrodynamic Model for Silicon Semiconductors Including Crystal Heating 127
Generalized observables in stochastic quantum models in phase space 125
AN EXTENDED HYDRODYNAMICAL MODEL FOR CHARGE TRANSPORT IN SI 125
A hierarchy of macroscopic models for phonon transport in graphene 125
A NON PARABOLIC HYDRODYNAMICAL SUBBAND MODEL FOR SEMICONDUCTORS BASED ON THE MAXIMUM ENTROPY PRINCIPLE 123
A BGK TYPE APPROXIMATION FOR THE COLLISION OPERATOR OF THE TRANSPORT EQUATION FOR SEMICONDUCTORS 122
A comparison between two hydrodynamical models for hole transport in Si semiconductors 119
Charge transport and mobility in monolayer graphene 116
A Hydrodynamical Model for Silicon Bipolar Devices 115
A comprehensive hydrodynamical model for charge transport in graphene 115
Charge transport in graphene including thermal effects 115
A New Formula for Thermal Conductivity Based on a Hierarchy of Hydrodynamical Models 114
A Macroscopic Model for Electron Transport in Silicon using Analytic Descriptions for both the Electron Bands and the Phonon Dispersion Relations 112
A HYDRODYNAMICAL MODEL FOR HOLE TRANSPORT IN SILICON SEMICONDUCTORS: THE CASE OF WARPED NON-PARABOLIC BANDS 112
VARIATIONAL METHODS FOR THE STEADY-STATE BOLTZMANN EQUATION FOR SEMICONDUCTORS 110
HYDRODYNAMICAL MODEL OF CHARGE TRANSPORT IN GA-AS BASED ON THE MAXIMUM ENTROPY PRINCIPLE 108
New Perspectives on the mathematical modeling of semiconductors 107
Thermal conductivity reduction by embedding nanoparticles 105
A two population model for electron transport in Si 103
Closure relations: a case from semiconductors 101
SIMULATION OF A DOUBLE-GATE MOSFET BY A NONPARABOLIC HYDRODYNAMICAL SUBBAND MODEL FOR SEMICONDUCTORS BASED ON THE MAXIMUM ENTROPY PRINCIPLE 101
MAXIMUM ENTROPY PRINCIPLE IN RELATIVISTIC RADIATION HYDRODYNAMICS 101
SI AND GAAS MOBILITY DERIVED FROM A HYDRODYNAMICAL MODEL FOR SEMICONDUCTORS BASED ON THE MAXIMUM ENTROPY PRINCIPLE 100
A hybrid Krasnosel'skiĭ-Schauder fixed point theorem for systems 98
An extended fluid-dynamical model describing electron transport in semiconductors 98
Handbook of Optoelectronic Device Modeling and Simulation: Fundamentals, Materials, Nanostructures, LEDs, and Amplifiers, Vol. 1 98
Comparing Kinetic and MEP Model of Charge Transport in Graphene 98
An improved 2D–3D model for charge transport based on the maximum entropy principle 98
Forest fire spreading: A nonlinear stochastic model continuous in space and time 98
Non-parabolic tail hydrodynamical model for silicon semiconductors 97
Gunn Oscillations described by the MEP hydrodynamical model of semiconductors, 95
NUMERICAL SIMULATION OF A DOUBLE-GATE MOSFET WITH A SUBBAND MODEL FOR SEMICONDUCTORS BASED ON THE MAXIMUM ENTROPY PRINCIPLE 95
MEP PARABOLIC HYDRODYNAMICAL MODEL FOR HOLES IN SILICON SEMICONDUCTORS 95
Hyperbolic PDAEs for semiconductor devices coupled with circuits 94
SIMULATION OF GUNN OSCILLATIONS WITH A NON-PARABOLIC HYDRODYNAMICAL MODEL BASED ON THE MAXIMUM ENTROPY PRINCIPLE 93
Compton Cooling of a Radiating Fluid 91
Some Mathematical Considerations on Solid State Physics in the Framework of the Phase Space Formulation of Quantum Mechanics 91
Extended hydrodynamical models for plasmas 90
TWO DIMENSIONAL MESFET SIMULATION OF TRANSIENT AND STEADY STATES WITH KINETIC BASED HYDRODYNAMICAL MODELS 88
Scientific Computing in Electrical Engineering 87
NON-LINEAR DETERMINATION OF THE DISTRIBUTION FUNCTION OF DEGENERATE GASES WITH AN APPLICATION TO SEMICONDUCTORS 86
Perspectives in semiconductor device simulation 86
Nonlinear models for silicon semiconductors 86
HYDRODYNAMIC SUBBAND MODEL FOR SEMICONDUCTORS BASED ON THE MAXIMUM ENTROPY PRINCIPLE 83
Exploitation of the Maximum Entropy Principle in Mathematical Modeling of Charge Transport in Semiconductors 82
Maximum Entropy Hydrodynamical model for GaAs Semiconductors with Applications to electronic Devices 82
Mobility in GaAs semiconductors 82
Hole mobility in Silicon semiconductors, Proceedings of SCEE 2004, Capo D’Orlando 82
Optimal Design of Equilibrium Solutions of the Vlasov–Poisson System by an External Electric Field 81
THEORETICAL FOUNDATION FOR TAIL ELECTRON HYDRODINAMICAL MODELS IN SEMICONDUCTORS 81
MAXIMUM ENTROPY PRINCIPLE IN RELATIVISTIC RADIATION HYDRODYNAMICS II: COMPTON AND DOUBLE COMPTON EFFECT 81
About the definition of the local equilibrium lattice temperature in suspended monolayer graphene 81
RECENT DEVELOPMENTS IN HYDRODYNAMICAL MODELING OF SEMICONDUCTORS 80
THE SEMICONDUCTOR STEADY BOLTZMANN EQUATION: A VARIATIONAL FORMULATION 79
How embedding nanoparticles affects semiconductor thermal conductivity 78
EXACT MAXIMUM ENTROPY CLOSURE OF THE HYDRODYNAMICAL MODEL FOR SI SEMICONDUCTORS: THE 8-MOMENT CASE 77
Heat Generation and Dissipation 77
HIGH FIELD CLOSURES FOR HYDRODYNAMICAL MODELS FOR THE TRANSPORT OF CHARGE CARRIERS IN SEMICONDUCTORS 76
Comparing kinetic and hydrodynamical models for electron transport in monolayer graphene 76
Deterministic Solutions of the Boltzmann Equation for Charge Transport in Graphene on Substrates 73
Nonlinear Exact Closure for the Hydrodynamical Model of Semiconductors based on the Maximum Entropy Principle 71
Numerical simulation of a hydrodynamic subband model for semiconductors based on the maximum entropy principle 70
Exploitation of the Maximum Entropy Principle in the Study of Thermal Conductivity of Silicon, Germanium and Graphene 62
Some Electric, Thermal, and Thermoelectric Properties of Suspended Monolayer Graphene 61
Numerical simulation of a subband model based on the Maximum Entropy Principle 61
Monte Carlo Analysis of Thermal Effects in Monolayer Graphene 61
Extended hydrodynamical models for plasmas (vol 35, pg 2003, 2023) 59
Simulation of nanoscale double-gate MOSFETs 59
Quantum energy-transport and drift-diffusion models for electron transport in graphene: an approach by the wigner function 54
Correction to: Extended hydrodynamical models for plasmas (Continuum Mechanics and Thermodynamics, (2023), 35, 5, (2003-2016), 10.1007/s00161-023-01223-x) 11
An existence result in annular regions times conical shells and its application to nonlinear Poisson systems 6
Totale 6.920
Categoria #
all - tutte 40.886
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 40.886


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202162 0 0 0 0 0 0 0 0 0 0 0 62
2021/2022559 2 1 2 18 69 36 6 152 7 5 77 184
2022/2023585 81 53 16 78 84 50 0 48 55 16 82 22
2023/2024341 31 17 21 15 39 25 16 38 26 11 20 82
2024/20251.106 43 171 31 72 120 64 36 57 109 24 89 290
2025/20263.098 430 130 284 401 597 177 310 149 177 249 61 133
Totale 6.920