IRIS
DE ROSE, Raffaele
 Distribuzione geografica
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Continente #
NA - Nord America 4.890
AS - Asia 2.149
EU - Europa 1.415
SA - Sud America 559
AF - Africa 140
OC - Oceania 7
Continente sconosciuto - Info sul continente non disponibili 2
Totale 9.162
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Nazione #
US - Stati Uniti d'America 4.797
SG - Singapore 1.045
BR - Brasile 435
CN - Cina 385
UA - Ucraina 347
DE - Germania 325
VN - Vietnam 267
IT - Italia 241
HK - Hong Kong 205
SE - Svezia 148
FI - Finlandia 118
SN - Senegal 70
CA - Canada 55
AR - Argentina 45
KR - Corea 42
RU - Federazione Russa 39
TR - Turchia 36
GB - Regno Unito 35
ZA - Sudafrica 34
IN - India 32
AT - Austria 28
BD - Bangladesh 26
EC - Ecuador 26
NL - Olanda 26
BE - Belgio 25
FR - Francia 24
IQ - Iraq 22
MX - Messico 21
CO - Colombia 19
ID - Indonesia 19
CZ - Repubblica Ceca 17
VE - Venezuela 11
PL - Polonia 10
MA - Marocco 9
PK - Pakistan 9
DZ - Algeria 8
JP - Giappone 8
AE - Emirati Arabi Uniti 7
PE - Perù 7
TN - Tunisia 7
CL - Cile 6
PY - Paraguay 6
AZ - Azerbaigian 5
ES - Italia 5
KE - Kenya 5
MY - Malesia 5
AU - Australia 4
DO - Repubblica Dominicana 4
GR - Grecia 4
SA - Arabia Saudita 4
UZ - Uzbekistan 4
IE - Irlanda 3
JO - Giordania 3
KZ - Kazakistan 3
LT - Lituania 3
PA - Panama 3
PS - Palestinian Territory 3
RO - Romania 3
TT - Trinidad e Tobago 3
TW - Taiwan 3
BB - Barbados 2
BG - Bulgaria 2
BO - Bolivia 2
BY - Bielorussia 2
CR - Costa Rica 2
GE - Georgia 2
HN - Honduras 2
IL - Israele 2
OM - Oman 2
UY - Uruguay 2
AL - Albania 1
AO - Angola 1
BA - Bosnia-Erzegovina 1
BH - Bahrain 1
BN - Brunei Darussalam 1
BW - Botswana 1
CG - Congo 1
DK - Danimarca 1
EG - Egitto 1
ET - Etiopia 1
EU - Europa 1
KH - Cambogia 1
KW - Kuwait 1
LB - Libano 1
LK - Sri Lanka 1
LU - Lussemburgo 1
LV - Lettonia 1
MO - Macao, regione amministrativa speciale della Cina 1
NG - Nigeria 1
NI - Nicaragua 1
NO - Norvegia 1
NP - Nepal 1
NZ - Nuova Zelanda 1
PT - Portogallo 1
PW - Palau 1
QA - Qatar 1
RS - Serbia 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
SY - Repubblica araba siriana 1
Totale 9.159
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Città #
Dallas 2.551
Chandler 419
Singapore 398
Hong Kong 180
Jacksonville 177
San Mateo 166
Boardman 147
Beijing 118
Helsinki 113
Ashburn 97
Ho Chi Minh City 95
Dearborn 76
Dakar 70
Munich 68
Hanoi 67
Rende 67
Shanghai 63
Lawrence 62
Roxbury 61
New York 57
Bremen 45
Seoul 42
Brooklyn 40
Des Moines 39
Ann Arbor 36
Ottawa 36
Hefei 32
São Paulo 30
Wilmington 29
Inglewood 27
Izmir 27
Cambridge 26
Falkenstein 25
Milan 24
Ogden 24
The Dalles 24
Council Bluffs 23
Vienna 23
Amsterdam 22
Brussels 22
Columbus 22
Chicago 20
Los Angeles 18
Cosenza 17
San Jose 17
Bari 14
Santa Clara 14
Cape Town 13
Rio de Janeiro 13
San Francisco 13
Brno 12
Frankfurt am Main 12
Tianjin 12
West Jordan 12
Falls Church 11
Guayaquil 11
Redwood City 11
Rome 11
Belo Horizonte 10
Biên Hòa 10
Brasília 10
Da Nang 10
Guangzhou 10
Johannesburg 10
London 10
Baghdad 9
Central 9
Guarulhos 9
Haiphong 9
Ninh Bình 9
Quito 9
Turin 9
Hải Dương 8
Tokyo 8
Toronto 8
Warsaw 8
Curitiba 7
Houston 7
Can Tho 6
Lima 6
Nuremberg 6
Paris 6
Serra 6
Vibo Valentia 6
Baku 5
Bologna 5
Boston 5
Catanzaro 5
Kilburn 5
Lấp Vò 5
Manaus 5
Norwalk 5
Pittsburgh 5
Santo André 5
Seattle 5
São José dos Pinhais 5
Tunis 5
Campinas 4
Caracas 4
Catania 4
Totale 6.193
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Nome #
A 0.25-V, 5.3-pW Voltage Reference with 25-μV/°C Temperature Coefficient, 140-μV/V Line Sensitivity and 2,200-μm2 Area in 180nm 1.454
A 0.6-to-1.8V CMOS Current Reference with Near-100% Power Utilization 1.401
A Framework for Energy-Efficiency in Smart Home Environments 161
An Ultralow-Voltage Energy-Efficient Level Shifter 152
A Methodology to Account for the Finger Interruptions in Solar Cell Performance 141
A Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJs 139
A comparative study of MWT architectures by means of numerical simulations 137
A Physical Unclonable Function Based on a 2-Transistor Subthreshold Voltage Divider 136
A Variation-Aware Timing Modeling Approach for Write Operation in Hybrid CMOS/STT-MTJ Circuits 131
Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework 130
2-D numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance 128
Collaborative Smart Environments for energy-efficiency and quality of life 125
A 3.2-pW, 0.2-V Trimming-Less Voltage Reference with 1.4-mV Across-Wafer Total Accuracy 122
A methodology to account for the finger non-uniformity in photovoltaic solar cell 119
Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework 118
Designing Dynamic Carry Skip Adders: Analysis and Comparison 113
Static CMOS Physically Unclonable Function Based on 4T Voltage Divider With 0.6%-1.5% Bit Instability at 0.4-1.8 V Operation in 180 nm 113
A portable class of 3-transistor current references with low-power sub-0.5 V operation 112
A variation-aware simulation framework for hybrid CMOS/spintronic circuits 111
Opto-electrical modelling and optimization study of a novel IBC c-Si solar cell 109
A Robust, High-Speed and Energy-Efficient Ultralow-Voltage Level Shifter 108
Spin-orbit torque based physical unclonable function 107
Variability-Aware Analysis of Hybrid MTJ/CMOS Circuits by a Micromagnetic-Based Simulation Framework 105
Design of a sub-1-V nanopower CMOS current reference 104
Low energy/delay overhead level shifter for wide-range voltage conversion 101
Assessment of 2D-FET Based Digital and Analog Circuits on Paper 100
PUF-Based Authentication-Oriented Architecture for Identification Tags 99
Understanding the impact of point-contact scheme and selective emitter in a c-Si BC-BJ solar cell by full 3D numerical simulations 97
Comparative analysis of yield optimized pulsed flip-flops 97
Trimming-Less Voltage Reference for Highly Uncertain Harvesting Down to 0.25 V, 5.4 pW 97
Device-to-system level simulation framework for STT-DMTJ based cache memory 96
Design guidelines for a metallization scheme with multiple-emitter contact lines in BC-BJ solar cells 95
Design and evaluation of high-speed energy-aware carry skip adders 95
Design of a 3T current reference for low-voltage, low-power operation 94
Hardware implementation of a Test Lab for Smart Home environments 93
Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs 92
Impact of Scaling on Physical Unclonable Function Based on Spin-Orbit Torque 91
Impact of voltage scaling on STT-MRAMs through a variability-aware simulation framework 88
Impact of Process Variations on Flip-Flops Energy and Timing Characteristics 85
Highly Stable PUFs Based on Stacked Voltage Divider for Near-Zero BER Native Sensitivity to Voltage Variations 84
Double-precision Dual Mode Logic carry-save multiplier 84
Two- and three-dimensional numerical simulation of advanced silicon solar cells 84
Exploiting STT-MRAMs for Cryogenic Non-Volatile Cache Applications 84
Numerical Simulation and Modeling of Resistive and Recombination Losses in MWT Solar Cells 82
Compact Modeling of Perpendicular STT-MTJs with Double Reference Layers 82
Effect of shunt resistance on the performance of mc-Silicon solar cells: A combined electro-optical and thermal investigation 82
An energy aware variation-tolerant writing termination control for STT-based non volatile flip-flops 81
Evaluating the energy efficiency of stt-mrams based on perpendicular mtjs with double reference layers 81
Optimization of Rear Point Contact Geometry by Means of 3-D Numerical Simulation 79
Impact of the Emitter Contact Pattern in c-Si BC-BJ Solar Cells by Numerical Simulations 78
Exploiting Double-Barrier MTJs for Energy-Efficient Nanoscaled STT-MRAMs 75
Numerical simulation on the influence of via and rear emitters in MWT solar cells 74
Design of Ultra-Low Voltage/Power Circuits and Systems 74
Loss analysis of silicon solar cells by means of numerical device simulation 73
Numerical simulation and modeling of rear point contact solar cells 72
Impact of process variations on pulsed flip-flops: Yield improving circuit-level techniques and comparative analysis 70
Relaxing non-volatility for energy-efficient DMTJ based cryogenic STT-MRAM 68
Assessment of paper-based MoS2 FET for Physically Unclonable Functions 66
Voltage Reference With Corner-Aware Replica Selection/Merging for 1.4-mV Accuracy in Harvested Systems Down to 3.9 pW, 0.2 V 63
Open issues for the numerical simulation of silicon solar cells 63
Field-Free Magnetic Tunnel Junction for Logic Operations Based on Voltage-Controlled Magnetic Anisotropy 61
Weak Physycally Unclonable Functions in CMOS Technology: A Review 60
Experimental analysis of variability in WS2-based devices for hardware security 60
Voltage-controlled magnetic anisotropy based physical unclonable function 59
Stability-Area Trade-off in Static CMOS PUF Based on 4T Subthreshold Voltage Divider 59
Performance analysis of rear point contact solar cells by three-dimensional numerical simulation 58
Simulation Analysis of DMTJ-Based STT-MRAM Operating at Cryogenic Temperatures 58
STT-MTJ Based Smart Implication for Energy-Efficient Logic-in-Memory Computing 56
SIMPLY+: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing 55
Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations 55
A Multi-Bit PUF Architecture Using a 2T Sub-Threshold Voltage Divider 53
Understanding the impact of the doping profiles on selective emitter solar cell by two-dimensional numerical simulation 50
Smart Material Implication Using Spin-Transfer Torque Magnetic Tunnel Junctions for Logic-in-Memory Computing 48
Totale 9.327
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Categoria #
all - tutte 48.263
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 48.263
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021198 0 0 0 0 0 38 11 63 8 47 8 23
2021/2022855 20 108 3 45 102 14 10 189 11 27 117 209
2022/2023945 146 91 25 114 150 78 1 120 112 26 35 47
2023/2024591 65 37 37 21 45 74 51 51 52 30 30 98
2024/20251.475 28 170 31 90 118 156 103 93 203 49 122 312
2025/20264.576 414 586 2.250 375 677 274 0 0 0 0 0 0
Totale 9.327