IRIS
CRUPI, FELICE
 Distribuzione geografica
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Continente #
NA - Nord America 12.594
AS - Asia 8.041
EU - Europa 4.910
SA - Sud America 2.359
AF - Africa 510
Continente sconosciuto - Info sul continente non disponibili 20
OC - Oceania 19
AN - Antartide 1
Totale 28.454
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Nazione #
US - Stati Uniti d'America 12.193
SG - Singapore 3.258
BR - Brasile 1.708
UA - Ucraina 1.503
CN - Cina 1.431
VN - Vietnam 1.373
DE - Germania 1.172
IT - Italia 662
SE - Svezia 393
HK - Hong Kong 362
FR - Francia 293
FI - Finlandia 279
TR - Turchia 265
BD - Bangladesh 258
KR - Corea 247
AR - Argentina 243
CA - Canada 203
IN - India 195
SN - Senegal 179
IQ - Iraq 130
MX - Messico 110
GB - Regno Unito 105
EC - Ecuador 91
RU - Federazione Russa 91
ZA - Sudafrica 88
CO - Colombia 83
VE - Venezuela 73
ID - Indonesia 70
BE - Belgio 63
MA - Marocco 60
AT - Austria 59
NL - Olanda 55
PK - Pakistan 55
CL - Cile 47
PY - Paraguay 45
CZ - Repubblica Ceca 39
PL - Polonia 39
TN - Tunisia 36
DZ - Algeria 35
MY - Malesia 35
SA - Arabia Saudita 35
UZ - Uzbekistan 33
KE - Kenya 31
PE - Perù 31
JP - Giappone 30
PH - Filippine 29
EG - Egitto 28
AE - Emirati Arabi Uniti 26
ES - Italia 24
JO - Giordania 23
NP - Nepal 23
UY - Uruguay 22
AZ - Azerbaigian 21
KZ - Kazakistan 18
AU - Australia 17
IE - Irlanda 17
BO - Bolivia 16
EU - Europa 16
IL - Israele 15
TW - Taiwan 15
ET - Etiopia 14
OM - Oman 14
HN - Honduras 12
JM - Giamaica 12
AL - Albania 11
CR - Costa Rica 11
DO - Repubblica Dominicana 11
LT - Lituania 11
LB - Libano 10
PA - Panama 10
BG - Bulgaria 9
RO - Romania 9
TH - Thailandia 9
SV - El Salvador 8
AO - Angola 7
BY - Bielorussia 7
CH - Svizzera 7
GR - Grecia 7
HU - Ungheria 7
KG - Kirghizistan 7
MD - Moldavia 7
PS - Palestinian Territory 7
GE - Georgia 6
QA - Qatar 6
SK - Slovacchia (Repubblica Slovacca) 6
TT - Trinidad e Tobago 6
KH - Cambogia 5
NG - Nigeria 5
NI - Nicaragua 5
AM - Armenia 4
BA - Bosnia-Erzegovina 4
BH - Bahrain 4
BW - Botswana 4
GA - Gabon 4
GT - Guatemala 4
KW - Kuwait 4
LV - Lettonia 4
MK - Macedonia 4
RS - Serbia 4
SI - Slovenia 4
Totale 28.386
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Città #
Dallas 3.905
Singapore 1.292
Jacksonville 1.078
Chandler 953
San Jose 657
Dearborn 552
Boardman 545
Ho Chi Minh City 478
Ashburn 463
San Mateo 417
Council Bluffs 380
Beijing 361
Hong Kong 329
Hanoi 328
Helsinki 256
Roxbury 239
Lawrence 236
Lauterbourg 225
Seoul 212
Izmir 210
Shanghai 201
Dakar 179
Des Moines 150
Hefei 148
São Paulo 148
Ottawa 143
New York 135
Munich 125
Ann Arbor 122
Rende 104
Inglewood 91
Cambridge 90
Wilmington 89
Brooklyn 88
Da Nang 76
Falkenstein 71
Bremen 70
Los Angeles 68
Ogden 68
Santa Clara 59
Grafing 58
Brussels 56
Rio de Janeiro 54
Milan 52
Baghdad 51
Haiphong 51
Chicago 46
Columbus 45
Vienna 43
San Francisco 37
The Dalles 37
Amsterdam 36
Guangzhou 36
Tianjin 36
Belo Horizonte 34
Brasília 34
Curitiba 34
Johannesburg 34
Mexico City 34
Cosenza 33
Guayaquil 33
Warsaw 33
Bari 32
Biên Hòa 32
Hải Dương 32
Brno 30
Rome 30
Tashkent 30
Dhaka 29
Frankfurt am Main 28
Pohang 28
Quito 28
Cape Town 26
Nairobi 24
Asunción 23
Ninh Bình 23
Amman 22
Caracas 22
Lima 21
Salvador 21
Baku 20
Bogotá 19
London 19
Montevideo 19
Santiago 19
Toronto 19
Turku 19
Castrolibero 18
Catanzaro 18
Erbil 18
Guarulhos 18
West Jordan 18
Buffalo 17
Falls Church 17
Montreal 17
Porto Alegre 17
Bologna 16
Cairo 16
Medellín 16
Redwood City 16
Totale 17.085
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Nome #
A 0.25-V, 5.3-pW Voltage Reference with 25-μV/°C Temperature Coefficient, 140-μV/V Line Sensitivity and 2,200-μm2 Area in 180nm 1.502
A 0.05 mm², 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS 1.446
A 0.6-to-1.8V CMOS Current Reference with Near-100% Power Utilization 1.443
1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks 196
A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference 194
An Ultralow-Voltage Energy-Efficient Level Shifter 190
Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures 184
Design of a 3T current reference for low-voltage, low-power operation 182
Exploiting Silicon Fingerprint for Device Authentication Using CMOS-PUF and ECC 180
A comparative study of MWT architectures by means of numerical simulations 164
A Methodology to Account for the Finger Interruptions in Solar Cell Performance 162
Accountability of IoT Devices 160
A low-voltage, low-power reconfigurable current-mode softmax circuit for analog neural networks 159
Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework 158
A Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJs 157
A Physical Unclonable Function Based on a 2-Transistor Subthreshold Voltage Divider 155
A Variation-Aware Timing Modeling Approach for Write Operation in Hybrid CMOS/STT-MTJ Circuits 154
A model for current conduction after soft-breakdown 153
A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering 152
A detailed analysis of the pre-breakdown current fluctuations in thin oxide MOS capacitors 151
A new circuit topology for the realization of very low-noise wide-bandwidth transimpedance amplifier 149
A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-MOSFET 148
A model for MOS gate stack quality evaluation based on the gate current 1/f noise 145
A 3.2-pW, 0.2-V Trimming-Less Voltage Reference with 1.4-mV Across-Wafer Total Accuracy 145
A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs 144
A methodology to account for the finger non-uniformity in photovoltaic solar cell 144
Static CMOS Physically Unclonable Function Based on 4T Voltage Divider With 0.6%-1.5% Bit Instability at 0.4-1.8 V Operation in 180 nm 144
Reconfigurable Intelligent Surface-Aided Indoor Radar Monitoring: A Feasibility Study 143
An algorithm for separating multilevel random telegraph signal from 1/f noise 141
A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes 140
Improved trade-off between noise and bandwidth in op-amp based transimpedance amplifier 139
A Robust, High-Speed and Energy-Efficient Ultralow-Voltage Level Shifter 139
Automatic radar-based 2-D localization exploiting vital signs signatures 138
A variation-aware simulation framework for hybrid CMOS/spintronic circuits 138
A portable class of 3-transistor current references with low-power sub-0.5 V operation 137
PUF-Based Authentication-Oriented Architecture for Identification Tags 135
Opto-electrical modelling and optimization study of a novel IBC c-Si solar cell 135
A Defect-Centric perspective on channel hot carrier variability in nMOSFETs 133
Reliability in GaN-based devices for power applications 133
Making IoT Services Accountable: A Solution Based on Blockchain and Physically Unclonable Functions 132
A new method for high-sensitivity noise measurements 131
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmentic circuits 130
Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework 126
Spin-orbit torque based physical unclonable function 126
Influence of GaN- and Si 3 N 4 -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination 124
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 123
Variability-Aware Analysis of Hybrid MTJ/CMOS Circuits by a Micromagnetic-Based Simulation Framework 123
Design of a sub-1-V nanopower CMOS current reference 122
Low energy/delay overhead level shifter for wide-range voltage conversion 121
Understanding the impact of point-contact scheme and selective emitter in a c-Si BC-BJ solar cell by full 3D numerical simulations 121
A virtual III-V tunnel FET technology platform for ultra-low voltage comparators and level shifters 121
A new method for high sensitivity noise measurements 121
Highly Stable PUFs Based on Stacked Voltage Divider for Near-Zero BER Native Sensitivity to Voltage Variations 120
Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors 120
Reliability improvements in AlGaN/GaN schottky barrier diodes with a gated edge termination 120
Device-to-system level simulation framework for STT-DMTJ based cache memory 120
Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs 119
Gate-level body biasing for subthreshold logic circuits: analytical modeling and design guidelines 119
A Procedure For Extracting 1/f Noise From Random Telegraph Signals 119
Assessment of 2D-FET Based Digital and Analog Circuits on Paper 119
Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics 118
Trimming-Less Voltage Reference for Highly Uncertain Harvesting Down to 0.25 V, 5.4 pW 117
New insights into the relation between channel hot carrier degradation and oxide breakdown in short channel nMOSFETs 116
A tool to support harbor terminals design 115
Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique 114
A novel methodology for sensing the breakdown location and its application to the reliability study of ultrathin Hf-silicate gate dielectrics 114
Three-channel amplifier for high-sensitivity voltage noise measurements 114
Enhanced sensitivity cross-correlation method for voltage noise measurements 114
Electrical and thermal transient during dielectric breakdown of thin oxides in metal-SiO2-silicon capacitors 113
Impact of voltage scaling on STT-MRAMs through a variability-aware simulation framework 113
Compact Modeling of Perpendicular STT-MTJs with Double Reference Layers 113
Impact of the variable output resistance on the transient response of LC transmission line CMOS buffers and its model 112
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 112
Radiation Tolerance of NROM Embedded Products 111
Chip/Package/Board Co-Simulation Methodology for Crosstalk between DC/DC Converter and ADC Input Channels 111
Strumento elettronico ad elevatissima sensibilità per misura del rumore di tensione di un bipolo 109
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 109
Analysis of Signal Processing Methods to Reject the DC Offset Contribution of Static Reflectors in FMCW Radar-Based Vital Signs Monitoring 109
Full Model and Characterization of Noise in Operational Amplifier 108
Dedicated probe system for wafer level noise measurements in MOS devices 108
Design guidelines for a metallization scheme with multiple-emitter contact lines in BC-BJ solar cells 108
Impact of Scaling on Physical Unclonable Function Based on Spin-Orbit Torque 108
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 107
Low frequency noise in nMOSFETs with subnanometer EOT hafnium-based gate dielectrics 107
Ultrasensitive low noise voltage amplifier for spectral analysis 106
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 105
Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells 103
Modeling the gate current 1/f noise and its application to advanced CMOS devices 103
Ultrasensitive method for current noise measurements 102
A picopower temperature-compensated, subthreshold CMOS voltage reference 102
Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics 102
Detection and classification of single-electron jumps in Si nanocrystal memories 102
An energy aware variation-tolerant writing termination control for STT-based non volatile flip-flops 102
Exploiting STT-MRAMs for Cryogenic Non-Volatile Cache Applications 102
Performance of current mirror with high-k gate dielectrics 101
A new technique for extracting the MOSFET threshold voltage using noise measurements 101
Noise as a probe of the charge transport mechanisms through thin oxides in mos structures 101
Biomedical Radar System for Real-Time Contactless Fall Detection and Indoor Localization 100
A novel ultra sensitive method for voltage noise measurements 99
Evaluating the energy efficiency of stt-mrams based on perpendicular mtjs with double reference layers 99
Totale 16.799
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Categoria #
all - tutte 156.561
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 156.561
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021201 0 0 0 0 0 0 0 0 0 0 0 201
2021/20222.150 36 153 7 160 236 78 22 490 33 46 330 559
2022/20232.271 420 171 35 280 330 200 1 311 268 67 90 98
2023/20241.602 166 130 97 63 119 149 105 147 143 82 73 328
2024/20253.504 125 571 66 200 176 316 177 225 528 122 295 703
2025/202614.706 1.424 1.159 3.692 1.333 2.058 838 1.235 598 662 818 398 491
Totale 28.709