IRIS
CRUPI, FELICE
 Distribuzione geografica
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Continente #
NA - Nord America 11.980
AS - Asia 7.838
EU - Europa 4.810
SA - Sud America 2.357
AF - Africa 510
Continente sconosciuto - Info sul continente non disponibili 20
OC - Oceania 19
AN - Antartide 1
Totale 27.535
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Nazione #
US - Stati Uniti d'America 11.609
SG - Singapore 3.230
BR - Brasile 1.708
UA - Ucraina 1.503
CN - Cina 1.375
VN - Vietnam 1.371
DE - Germania 1.171
IT - Italia 563
SE - Svezia 393
HK - Hong Kong 356
FR - Francia 293
FI - Finlandia 279
TR - Turchia 265
KR - Corea 247
AR - Argentina 243
CA - Canada 197
IN - India 195
SN - Senegal 179
BD - Bangladesh 155
IQ - Iraq 130
MX - Messico 107
GB - Regno Unito 105
RU - Federazione Russa 91
EC - Ecuador 90
ZA - Sudafrica 88
CO - Colombia 82
VE - Venezuela 73
ID - Indonesia 69
BE - Belgio 63
MA - Marocco 60
AT - Austria 59
NL - Olanda 55
PK - Pakistan 55
CL - Cile 47
PY - Paraguay 45
CZ - Repubblica Ceca 39
PL - Polonia 39
TN - Tunisia 36
DZ - Algeria 35
SA - Arabia Saudita 35
MY - Malesia 33
UZ - Uzbekistan 33
KE - Kenya 31
PE - Perù 31
JP - Giappone 29
PH - Filippine 29
EG - Egitto 28
AE - Emirati Arabi Uniti 24
ES - Italia 24
JO - Giordania 23
NP - Nepal 22
UY - Uruguay 22
AZ - Azerbaigian 21
KZ - Kazakistan 18
AU - Australia 17
IE - Irlanda 17
BO - Bolivia 16
EU - Europa 16
IL - Israele 15
TW - Taiwan 15
ET - Etiopia 14
OM - Oman 14
AL - Albania 11
DO - Repubblica Dominicana 11
JM - Giamaica 11
LT - Lituania 11
LB - Libano 10
PA - Panama 10
BG - Bulgaria 9
RO - Romania 9
TH - Thailandia 9
CR - Costa Rica 8
HN - Honduras 8
AO - Angola 7
BY - Bielorussia 7
CH - Svizzera 7
GR - Grecia 7
HU - Ungheria 7
KG - Kirghizistan 7
MD - Moldavia 7
PS - Palestinian Territory 7
GE - Georgia 6
QA - Qatar 6
SK - Slovacchia (Repubblica Slovacca) 6
NG - Nigeria 5
TT - Trinidad e Tobago 5
AM - Armenia 4
BA - Bosnia-Erzegovina 4
BH - Bahrain 4
BW - Botswana 4
GA - Gabon 4
KH - Cambogia 4
KW - Kuwait 4
LV - Lettonia 4
MK - Macedonia 4
RS - Serbia 4
SI - Slovenia 4
CY - Cipro 3
DK - Danimarca 3
GT - Guatemala 3
Totale 27.471
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Città #
Dallas 3.902
Singapore 1.286
Jacksonville 1.077
Chandler 953
San Jose 622
Dearborn 552
Boardman 545
Ho Chi Minh City 477
Ashburn 423
San Mateo 417
Beijing 351
Hanoi 328
Hong Kong 324
Helsinki 256
Roxbury 239
Lawrence 236
Lauterbourg 225
Seoul 212
Izmir 210
Shanghai 200
Dakar 179
Des Moines 149
Hefei 148
São Paulo 148
Ottawa 143
Munich 125
Ann Arbor 122
New York 111
Rende 103
Inglewood 91
Cambridge 90
Wilmington 89
Brooklyn 86
Council Bluffs 78
Da Nang 76
Falkenstein 71
Bremen 70
Ogden 68
Los Angeles 60
Grafing 58
Brussels 56
Rio de Janeiro 54
Baghdad 51
Haiphong 51
Milan 44
Vienna 43
Chicago 40
San Francisco 37
Santa Clara 37
The Dalles 37
Amsterdam 36
Columbus 36
Guangzhou 36
Tianjin 35
Belo Horizonte 34
Brasília 34
Curitiba 34
Johannesburg 34
Cosenza 33
Guayaquil 33
Warsaw 33
Biên Hòa 32
Hải Dương 32
Mexico City 31
Brno 30
Tashkent 30
Dhaka 29
Frankfurt am Main 28
Pohang 28
Bari 27
Quito 27
Cape Town 26
Rome 26
Nairobi 24
Asunción 23
Ninh Bình 23
Amman 22
Caracas 22
Lima 21
Salvador 21
Baku 20
London 19
Montevideo 19
Santiago 19
Turku 19
Bogotá 18
Castrolibero 18
Erbil 18
Guarulhos 18
West Jordan 18
Catanzaro 17
Falls Church 17
Montreal 17
Porto Alegre 17
Cairo 16
Medellín 16
Redwood City 16
Ribeirão Preto 16
Sorocaba 16
Thái Bình 16
Totale 16.580
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Nome #
A 0.25-V, 5.3-pW Voltage Reference with 25-μV/°C Temperature Coefficient, 140-μV/V Line Sensitivity and 2,200-μm2 Area in 180nm 1.481
A 0.05 mm², 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS 1.433
A 0.6-to-1.8V CMOS Current Reference with Near-100% Power Utilization 1.429
1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks 194
A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference 190
An Ultralow-Voltage Energy-Efficient Level Shifter 181
Exploiting Silicon Fingerprint for Device Authentication Using CMOS-PUF and ECC 173
A Methodology to Account for the Finger Interruptions in Solar Cell Performance 162
Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures 160
A comparative study of MWT architectures by means of numerical simulations 160
A Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJs 155
A model for current conduction after soft-breakdown 153
A Physical Unclonable Function Based on a 2-Transistor Subthreshold Voltage Divider 152
Accountability of IoT Devices 151
A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering 150
A detailed analysis of the pre-breakdown current fluctuations in thin oxide MOS capacitors 150
A Variation-Aware Timing Modeling Approach for Write Operation in Hybrid CMOS/STT-MTJ Circuits 150
Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework 149
A new circuit topology for the realization of very low-noise wide-bandwidth transimpedance amplifier 147
A model for MOS gate stack quality evaluation based on the gate current 1/f noise 145
A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-MOSFET 144
A 3.2-pW, 0.2-V Trimming-Less Voltage Reference with 1.4-mV Across-Wafer Total Accuracy 144
Reconfigurable Intelligent Surface-Aided Indoor Radar Monitoring: A Feasibility Study 142
A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs 142
A methodology to account for the finger non-uniformity in photovoltaic solar cell 141
An algorithm for separating multilevel random telegraph signal from 1/f noise 140
A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes 139
A Robust, High-Speed and Energy-Efficient Ultralow-Voltage Level Shifter 138
Static CMOS Physically Unclonable Function Based on 4T Voltage Divider With 0.6%-1.5% Bit Instability at 0.4-1.8 V Operation in 180 nm 137
A portable class of 3-transistor current references with low-power sub-0.5 V operation 136
A variation-aware simulation framework for hybrid CMOS/spintronic circuits 135
Improved trade-off between noise and bandwidth in op-amp based transimpedance amplifier 134
Reliability in GaN-based devices for power applications 133
A Defect-Centric perspective on channel hot carrier variability in nMOSFETs 132
Making IoT Services Accountable: A Solution Based on Blockchain and Physically Unclonable Functions 131
Automatic radar-based 2-D localization exploiting vital signs signatures 130
A new method for high-sensitivity noise measurements 130
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmentic circuits 130
Opto-electrical modelling and optimization study of a novel IBC c-Si solar cell 127
Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework 126
PUF-Based Authentication-Oriented Architecture for Identification Tags 124
Influence of GaN- and Si 3 N 4 -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination 124
Spin-orbit torque based physical unclonable function 122
A low-voltage, low-power reconfigurable current-mode softmax circuit for analog neural networks 122
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 120
Design of a sub-1-V nanopower CMOS current reference 120
A virtual III-V tunnel FET technology platform for ultra-low voltage comparators and level shifters 119
A new method for high sensitivity noise measurements 119
Assessment of 2D-FET Based Digital and Analog Circuits on Paper 119
A Procedure For Extracting 1/f Noise From Random Telegraph Signals 118
Reliability improvements in AlGaN/GaN schottky barrier diodes with a gated edge termination 118
Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs 117
Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors 117
Low energy/delay overhead level shifter for wide-range voltage conversion 117
Device-to-system level simulation framework for STT-DMTJ based cache memory 117
New insights into the relation between channel hot carrier degradation and oxide breakdown in short channel nMOSFETs 116
Variability-Aware Analysis of Hybrid MTJ/CMOS Circuits by a Micromagnetic-Based Simulation Framework 116
Gate-level body biasing for subthreshold logic circuits: analytical modeling and design guidelines 114
Highly Stable PUFs Based on Stacked Voltage Divider for Near-Zero BER Native Sensitivity to Voltage Variations 113
Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique 113
Design of a 3T current reference for low-voltage, low-power operation 113
Understanding the impact of point-contact scheme and selective emitter in a c-Si BC-BJ solar cell by full 3D numerical simulations 112
Enhanced sensitivity cross-correlation method for voltage noise measurements 112
Impact of the variable output resistance on the transient response of LC transmission line CMOS buffers and its model 111
Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics 110
Electrical and thermal transient during dielectric breakdown of thin oxides in metal-SiO2-silicon capacitors 110
Trimming-Less Voltage Reference for Highly Uncertain Harvesting Down to 0.25 V, 5.4 pW 110
Three-channel amplifier for high-sensitivity voltage noise measurements 109
Full Model and Characterization of Noise in Operational Amplifier 108
Dedicated probe system for wafer level noise measurements in MOS devices 108
Design guidelines for a metallization scheme with multiple-emitter contact lines in BC-BJ solar cells 108
Radiation Tolerance of NROM Embedded Products 108
A tool to support harbor terminals design 108
Chip/Package/Board Co-Simulation Methodology for Crosstalk between DC/DC Converter and ADC Input Channels 108
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 107
Impact of voltage scaling on STT-MRAMs through a variability-aware simulation framework 107
Strumento elettronico ad elevatissima sensibilità per misura del rumore di tensione di un bipolo 106
Impact of Scaling on Physical Unclonable Function Based on Spin-Orbit Torque 106
Low frequency noise in nMOSFETs with subnanometer EOT hafnium-based gate dielectrics 105
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 104
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 104
Ultrasensitive low noise voltage amplifier for spectral analysis 104
A picopower temperature-compensated, subthreshold CMOS voltage reference 102
Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells 102
A novel methodology for sensing the breakdown location and its application to the reliability study of ultrathin Hf-silicate gate dielectrics 102
Exploiting STT-MRAMs for Cryogenic Non-Volatile Cache Applications 102
Ultrasensitive method for current noise measurements 101
Performance of current mirror with high-k gate dielectrics 101
Modeling the gate current 1/f noise and its application to advanced CMOS devices 101
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 100
Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics 100
An energy aware variation-tolerant writing termination control for STT-based non volatile flip-flops 100
Detection and classification of single-electron jumps in Si nanocrystal memories 99
Multiple gate NVM cells with improved Fowler-Nordheim tunneling program and erase performances 98
Compact Modeling of Perpendicular STT-MTJs with Double Reference Layers 97
Design of a 75 nW, 0.5 V Subthreshold CMOS Operational Amplifier 97
A new technique for extracting the MOSFET threshold voltage using noise measurements 96
A novel ultra sensitive method for voltage noise measurements 96
Evaluating the energy efficiency of stt-mrams based on perpendicular mtjs with double reference layers 96
A new physically-based model for temperature acceleration of time-to-breakdown 95
Totale 16.304
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Categoria #
all - tutte 149.938
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 149.938
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021449 0 0 0 0 0 0 0 0 0 231 17 201
2021/20222.150 36 153 7 160 236 78 22 490 33 46 330 559
2022/20232.271 420 171 35 280 330 200 1 311 268 67 90 98
2023/20241.602 166 130 97 63 119 149 105 147 143 82 73 328
2024/20253.504 125 571 66 200 176 316 177 225 528 122 295 703
2025/202613.784 1.424 1.159 3.692 1.333 2.058 838 1.235 598 662 785 0 0
Totale 27.787