IRIS
CRUPI, FELICE
 Distribuzione geografica
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Continente #
NA - Nord America 14.840
AS - Asia 8.251
EU - Europa 5.486
SA - Sud America 2.399
AF - Africa 517
Continente sconosciuto - Info sul continente non disponibili 281
OC - Oceania 21
AN - Antartide 1
Totale 31.796
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Nazione #
US - Stati Uniti d'America 14.295
SG - Singapore 3.271
BR - Brasile 1.726
UA - Ucraina 1.507
CN - Cina 1.496
VN - Vietnam 1.381
IT - Italia 1.191
DE - Germania 1.176
SE - Svezia 393
HK - Hong Kong 366
BD - Bangladesh 327
FR - Francia 295
FI - Finlandia 282
TR - Turchia 266
CA - Canada 256
KR - Corea 248
AR - Argentina 247
IN - India 215
SN - Senegal 179
IQ - Iraq 131
GB - Regno Unito 124
MX - Messico 114
EC - Ecuador 94
RU - Federazione Russa 92
CO - Colombia 90
ZA - Sudafrica 88
VE - Venezuela 76
ID - Indonesia 70
BE - Belgio 64
MA - Marocco 60
AT - Austria 59
NL - Olanda 56
PK - Pakistan 55
CL - Cile 49
PY - Paraguay 46
CZ - Repubblica Ceca 41
MY - Malesia 40
PL - Polonia 40
DZ - Algeria 37
SA - Arabia Saudita 36
TN - Tunisia 36
PH - Filippine 34
JP - Giappone 33
KE - Kenya 33
UZ - Uzbekistan 33
PE - Perù 31
AE - Emirati Arabi Uniti 30
EG - Egitto 28
ES - Italia 27
NP - Nepal 24
HN - Honduras 23
JO - Giordania 23
UY - Uruguay 23
AZ - Azerbaigian 21
CR - Costa Rica 21
KZ - Kazakistan 18
AU - Australia 17
IE - Irlanda 17
JM - Giamaica 17
SV - El Salvador 17
TW - Taiwan 17
BO - Bolivia 16
EU - Europa 16
TT - Trinidad e Tobago 16
IL - Israele 15
PR - Porto Rico 15
ET - Etiopia 14
OM - Oman 14
DO - Repubblica Dominicana 12
RO - Romania 12
TH - Thailandia 12
AL - Albania 11
GT - Guatemala 11
LT - Lituania 11
NI - Nicaragua 11
PA - Panama 11
LB - Libano 10
BG - Bulgaria 9
GP - Guadalupe 8
AO - Angola 7
BY - Bielorussia 7
CH - Svizzera 7
CW - ???statistics.table.value.countryCode.CW??? 7
GR - Grecia 7
HU - Ungheria 7
KG - Kirghizistan 7
MD - Moldavia 7
PS - Palestinian Territory 7
QA - Qatar 7
GE - Georgia 6
SK - Slovacchia (Repubblica Slovacca) 6
KH - Cambogia 5
KW - Kuwait 5
NG - Nigeria 5
RS - Serbia 5
AM - Armenia 4
BA - Bosnia-Erzegovina 4
BH - Bahrain 4
BW - Botswana 4
GA - Gabon 4
Totale 31.448
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Città #
Dallas 3.921
Singapore 1.301
Jacksonville 1.080
Council Bluffs 1.028
Chandler 953
San Jose 908
Ashburn 805
Dearborn 553
Boardman 545
Ho Chi Minh City 480
San Mateo 417
Beijing 383
Hong Kong 333
Hanoi 330
Helsinki 259
Milan 250
Roxbury 239
Lawrence 236
Lauterbourg 225
Seoul 212
Izmir 210
Shanghai 201
New York 195
Dakar 179
Santa Clara 156
São Paulo 156
Des Moines 151
Hefei 148
Ottawa 144
Munich 125
Ann Arbor 122
Chicago 107
Rende 104
Brooklyn 93
Los Angeles 92
Inglewood 91
Cambridge 90
Wilmington 90
Da Nang 77
Falkenstein 71
Bremen 70
Ogden 68
Rome 68
Grafing 58
Brussels 56
Rio de Janeiro 54
Baghdad 51
Haiphong 51
Miano 50
Columbus 45
Vienna 43
Charlotte 38
San Francisco 38
Amsterdam 37
Bari 37
Mexico City 37
The Dalles 37
Guangzhou 36
Tianjin 36
Belo Horizonte 35
Brasília 35
Curitiba 34
Guayaquil 34
Johannesburg 34
Cosenza 33
Warsaw 33
Biên Hòa 32
Hải Dương 32
Brno 31
Dhaka 31
Phoenix 31
Frankfurt am Main 30
Tashkent 30
Mumbai 29
Quito 29
Toronto 29
London 28
Pohang 28
Buffalo 27
Cape Town 26
Nairobi 26
Naples 24
Asunción 23
Bologna 23
Ninh Bình 23
Amman 22
Caracas 22
Montreal 22
Bogotá 21
Lima 21
Salvador 21
Santiago 21
Baku 20
Montevideo 20
Erbil 19
Guarulhos 19
Turin 19
Turku 19
Castrolibero 18
Catanzaro 18
Totale 19.042
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Nome #
A 0.25-V, 5.3-pW Voltage Reference with 25-μV/°C Temperature Coefficient, 140-μV/V Line Sensitivity and 2,200-μm2 Area in 180nm 1.529
A 0.6-to-1.8V CMOS Current Reference with Near-100% Power Utilization 1.473
A 0.05 mm², 350 mV, 14 nW Fully-Integrated Temperature Sensor in 180-nm CMOS 1.473
A 2.6 nW, 0.45 V Temperature-Compensated Subthreshold CMOS Voltage Reference 221
1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks 213
An Ultralow-Voltage Energy-Efficient Level Shifter 204
Exploiting Silicon Fingerprint for Device Authentication Using CMOS-PUF and ECC 203
Design of a 3T current reference for low-voltage, low-power operation 198
Analytical model for the 1/f noise in the tunneling current through metal-oxide-semiconductor structures 196
A low-voltage, low-power reconfigurable current-mode softmax circuit for analog neural networks 180
Assessment of STT-MRAM performance at nanoscaled technology nodes using a device-to-memory simulation framework 178
A Methodology to Account for the Finger Interruptions in Solar Cell Performance 177
A comparative study of MWT architectures by means of numerical simulations 177
Accountability of IoT Devices 172
A Compact Model with Spin-Polarization Asymmetry for Nanoscaled Perpendicular MTJs 170
A Physical Unclonable Function Based on a 2-Transistor Subthreshold Voltage Divider 168
A Backscattering Model Incorporating the Effective Carrier Temperature in Nano-MOSFET 168
A Variation-Aware Timing Modeling Approach for Write Operation in Hybrid CMOS/STT-MTJ Circuits 168
A Microscopically Accurate Model of Partially Ballistic NanoMOSFETs in Saturation Based on Channel Backscattering 166
A detailed analysis of the pre-breakdown current fluctuations in thin oxide MOS capacitors 164
Static CMOS Physically Unclonable Function Based on 4T Voltage Divider With 0.6%-1.5% Bit Instability at 0.4-1.8 V Operation in 180 nm 164
A model for current conduction after soft-breakdown 163
A new circuit topology for the realization of very low-noise wide-bandwidth transimpedance amplifier 160
A 3.2-pW, 0.2-V Trimming-Less Voltage Reference with 1.4-mV Across-Wafer Total Accuracy 160
A portable class of 3-transistor current references with low-power sub-0.5 V operation 158
A model for MOS gate stack quality evaluation based on the gate current 1/f noise 156
A comparative study of the oxide breakdown in short-channel nMOSFETs and pMOSFETs stressed in inversion and in accumulation regimes 155
A methodology to account for the finger non-uniformity in photovoltaic solar cell 155
An algorithm for separating multilevel random telegraph signal from 1/f noise 153
A Robust, High-Speed and Energy-Efficient Ultralow-Voltage Level Shifter 153
Reconfigurable Intelligent Surface-Aided Indoor Radar Monitoring: A Feasibility Study 152
A Defect-Centric Analysis of the Temperature Dependence of the Channel Hot Carrier Degradation in nMOSFETs 152
A variation-aware simulation framework for hybrid CMOS/spintronic circuits 152
Automatic radar-based 2-D localization exploiting vital signs signatures 151
PUF-Based Authentication-Oriented Architecture for Identification Tags 150
Opto-electrical modelling and optimization study of a novel IBC c-Si solar cell 150
Reliability in GaN-based devices for power applications 148
Spin-orbit torque based physical unclonable function 147
Improved trade-off between noise and bandwidth in op-amp based transimpedance amplifier 145
A new method for high-sensitivity noise measurements 144
A Defect-Centric perspective on channel hot carrier variability in nMOSFETs 144
Understanding the Potential and Limitations of Tunnel FETs for Low-Voltage Analog/Mixed-Signal Circuits 143
Making IoT Services Accountable: A Solution Based on Blockchain and Physically Unclonable Functions 143
Analysis of Signal Processing Methods to Reject the DC Offset Contribution of Static Reflectors in FMCW Radar-Based Vital Signs Monitoring 142
Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework 141
Variability-Aware Analysis of Hybrid MTJ/CMOS Circuits by a Micromagnetic-Based Simulation Framework 139
Influence of GaN- and Si 3 N 4 -Passivation layers on the performance of AlGaN/GaN diodes with a gated edge termination 139
Understanding the impact of point-contact scheme and selective emitter in a c-Si BC-BJ solar cell by full 3D numerical simulations 138
Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics 136
Low energy/delay overhead level shifter for wide-range voltage conversion 136
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmentic circuits 136
A novel methodology for sensing the breakdown location and its application to the reliability study of ultrathin Hf-silicate gate dielectrics 136
A new method for high sensitivity noise measurements 135
Enhanced sensitivity cross-correlation method for voltage noise measurements 135
Highly Stable PUFs Based on Stacked Voltage Divider for Near-Zero BER Native Sensitivity to Voltage Variations 134
Impact of voltage scaling on STT-MRAMs through a variability-aware simulation framework 133
Reliability improvements in AlGaN/GaN schottky barrier diodes with a gated edge termination 133
Design of a sub-1-V nanopower CMOS current reference 133
Gate-level body biasing for subthreshold logic circuits: analytical modeling and design guidelines 132
Simulations and comparisons of basic analog and digital circuit blocks employing Tunnel FETs and conventional FinFETs 132
A virtual III-V tunnel FET technology platform for ultra-low voltage comparators and level shifters 132
Adjusting thermal stability in double-barrier MTJ for energy improvement in cryogenic STT-MRAMs 131
Compact Modeling of Perpendicular STT-MTJs with Double Reference Layers 131
Transients during pre-breakdown and hard breakdown of thin gate oxides in metal-SiO2-Si capacitors 129
Three-channel amplifier for high-sensitivity voltage noise measurements 129
A Procedure For Extracting 1/f Noise From Random Telegraph Signals 129
Device-to-system level simulation framework for STT-DMTJ based cache memory 129
Ultrasensitive method for current noise measurements 128
Full Model and Characterization of Noise in Operational Amplifier 128
Trimming-Less Voltage Reference for Highly Uncertain Harvesting Down to 0.25 V, 5.4 pW 128
Assessment of 2D-FET Based Digital and Analog Circuits on Paper 128
New insights into the relation between channel hot carrier degradation and oxide breakdown in short channel nMOSFETs 127
Impact of the variable output resistance on the transient response of LC transmission line CMOS buffers and its model 127
Electrical and thermal transient during dielectric breakdown of thin oxides in metal-SiO2-silicon capacitors 127
Detection and classification of single-electron jumps in Si nanocrystal memories 125
Chip/Package/Board Co-Simulation Methodology for Crosstalk between DC/DC Converter and ADC Input Channels 125
Radiation Tolerance of NROM Embedded Products 124
Dedicated probe system for wafer level noise measurements in MOS devices 123
Low frequency noise in nMOSFETs with subnanometer EOT hafnium-based gate dielectrics 123
Characterization of interface and oxide traps in Ge pMOSFETs based on DCIV technique 123
Impact of Scaling on Physical Unclonable Function Based on Spin-Orbit Torque 123
Biomedical Radar System for Real-Time Contactless Fall Detection and Indoor Localization 122
Soft breakdown of gate oxides in metal-SiO2-Si capacitors under stress with hot electrons 122
A tool to support harbor terminals design 122
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS FinFET technology node considering basic arithmetic circuits 122
Design guidelines for a metallization scheme with multiple-emitter contact lines in BC-BJ solar cells 121
Impact of TFET unidirectionality and ambipolarity on the performance of 6T SRAM cells 121
Strumento elettronico ad elevatissima sensibilità per misura del rumore di tensione di un bipolo 121
Assessment of InAs/AlGaSb Tunnel-FET Virtual Technology Platform for Low-Power Digital Circuits 120
Multiple gate NVM cells with improved Fowler-Nordheim tunneling program and erase performances 117
Performance of current mirror with high-k gate dielectrics 116
A new technique for extracting the MOSFET threshold voltage using noise measurements 116
Exploiting STT-MRAMs for Cryogenic Non-Volatile Cache Applications 116
Modeling the gate current 1/f noise and its application to advanced CMOS devices 115
Barrier Lowering and Backscattering Extraction in Short-Channel MOSFETs 115
Benchmarks of a III-V TFET technology platform against the 10-nm CMOS technology node considering 28T Full-Adders 114
Positive Bias Temperature Instability in nMOSFETs with ultra-thin Hf-silicate gate dielectrics 114
Ultrasensitive low noise voltage amplifier for spectral analysis 114
Evaluating the energy efficiency of stt-mrams based on perpendicular mtjs with double reference layers 114
A picopower temperature-compensated, subthreshold CMOS voltage reference 113
Totale 18.310
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Categoria #
all - tutte 169.806
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 169.806
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/20221.954 0 0 0 160 236 78 22 490 33 46 330 559
2022/20232.271 420 171 35 280 330 200 1 311 268 67 90 98
2023/20241.602 166 130 97 63 119 149 105 147 143 82 73 328
2024/20253.504 125 571 66 200 176 316 177 225 528 122 295 703
2025/202614.825 1.424 1.159 3.692 1.333 2.058 838 1.235 598 662 818 398 610
2026/20272.968 778 289 540 1.361 0 0 0 0 0 0 0 0
Totale 31.796